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EN25P10 Datasheet(PDF) 17 Page - Eon Silicon Solution Inc.

Part # EN25P10
Description  1 Mbit Uniform Sector, Serial Flash Memory
PDF  31 Pages
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Manufacturer  EON [Eon Silicon Solution Inc.]
Direct Link  http://www.essi.com.tw
Logo EON - Eon Silicon Solution Inc.

EN25P10 Datasheet(HTML) 17 Page - Eon Silicon Solution Inc.

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This Data Sheet may be revised by subsequent versions
©2004 Eon Silicon Solution, Inc., www.essi.com.tw
or modifications due to changes in technical specifications.
17
EN25P10
Rev. C, Issue Date: 2007/5/4
bits are then shifted out on the falling edge of CLK with most significant bit (MSB) first as shown in Figure
16. The Device ID value for the EN25P10 are listed in Table 5. The Device ID can be read continuously.
The instruction is completed by driving CS# high.
When Chip Select (CS#) is driven High, the device is put in the Stand-by Power mode. If the device was
not previously in the Deep Power-down mode, the transition to the Stand-by Power mode is immediate. If
the device was previously in the Deep Power-down mode, though, the transition to the Standby Power
mode is delayed by tRES2, and Chip Select (CS#) must remain High for at least tRES2 (max), as specified
in Table 10. Once in the Stand-by Power mode, the device waits to be selected, so that it can receive,
decode and execute instructions.
Except while an Erase, Program or Write Status Register cycle is in progress, the Release from Deep
Power-down and Read Device ID (RDI) instruction always provides access to the 8bit Device ID of the
device, and can be applied even if the Deep Power-down mode has not been entered.
Any Release from Deep Power-down and Read Device ID (RDI) instruction while an Erase, Program or
Write Status Register cycle is in progress, is not decoded, and has no effect on the cycle that is in
progress.



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