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TPCF8201 Datasheet(PDF) 4 Page - Toshiba Semiconductor |
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TPCF8201 Datasheet(HTML) 4 Page - Toshiba Semiconductor |
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4 / 7 page ![]() TPCF8201 2007-01-16 4 Drain-source voltage VDS (V) ID – VDS Drain-source voltage VDS (V) ID – VDS 5 4 2 1 0 0 0.2 1.7 0.4 0.6 0.8 VGS = 1.4 V 1.5 1.6 1.8 4 6 1 3 5 1.9 2 10 Common source Ta = 25°C Pulse test 8 6 4 2 0 10 0 3 4 5 VGS = 1.4V 1.5 1.6 1.7 2.1 10 3 1.9 1.8 2 1 2 Common source Ta = 25°C Pulse test ID – VGS Gate-source voltage VGS (V) 0 0 1 2 3 4 5 2 10 Ta = −55°C 25 100 4 6 8 Common source VDS = 10 V Pulse test VDS – VGS Gate-source voltage VGS (V) 0 0.4 0.6 0.8 1 0 ID = 3 A 2 4 6 8 10 0.75 1.5 0.2 Common source Ta = 25℃ Pulse test Drain current ID (A) ⎪Yfs⎪ – ID 1 10 100 0.1 1 10 25 100 Ta = −55°C Common source VDS = 10 V Pulse test Drain current ID (A) RDS (ON) – ID 1 0.1 1 10 100 10 1000 VGS = 4.5V 2.0 2.5 Common source Ta = 25°C Pulse test |
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