TPCF8201 datasheet(3/7 Pages) TOSHIBA

3 / 7 page

TPCF8201

2007-01-16

Electrical Characteristics (Ta = 25°C)

Characteristics

Symbol

Test Condition

Min

Typ.

Max

Unit

Gate leakage current

IGSS

VGS = ±10 V, VDS = 0 V

⎯

±10

μA

Drain cut-off current

IDSS

VDS = 20 V, VGS = 0 V

⎯

μA

V (BR) DSS

ID = 10 mA, VGS = 0 V

⎯

Drain-source breakdown voltage

V (BR) DSX

ID = 10 mA, VGS = -12 V

⎯

Gate threshold voltage

Vth

VDS = 10 V, ID = 200 μA

0.5

⎯

1.2

RDS (ON)

VGS = 2.0 V, ID = 1.5 A

⎯

100

RDS (ON)

VGS = 2.5 V, ID = 1.5 A

⎯

Drain-source ON resistance

RDS (ON)

VGS = 4.5 V, ID = 1.5 A

⎯

Forward transfer admittance

|Yfs|

VDS = 10 V, ID = 1.5 A

2.7

5.4

⎯

Input capacitance

Ciss

⎯

590

⎯

Reverse transfer capacitance

Crss

⎯

Output capacitance

Coss

VDS = 10 V, VGS = 0 V, f = 1 MHz

⎯

Rise time

⎯

3.0

⎯

Turn-on time

ton

⎯

7.5

⎯

Fall time

⎯

4.4

⎯

Switching time

Turn-off time

toff

Duty <= 1%, tw = 10 μs

⎯

Total gate charge

(gate-source plus gate-drain)

⎯

7.5

⎯

Gate-source charge1

Qgs1

⎯

1.3

⎯

Gate-drain (“miller”) charge

Qgd

VDD ∼− 16 V, VGS = 5 V,

ID = 3.0 A

⎯

2.1

⎯

Source-Drain Ratings and Characteristics (Ta = 25°C)

Characteristics

Symbol

Test Condition

Min

Typ.

Max

Unit

Drain reverse current

Pulse (Note 1)

IDRP

⎯

Forward voltage (diode)

VDSF

IDR = 3.0 A, VGS = 0 V

⎯

-1.2

VDD ∼− 10 V

0 V

VGS

5 V

ID = 1.5 A

TPCF8201 Datasheet(PDF) 3 Page - Toshiba Semiconductor

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