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TPCF8201 Datasheet(PDF) 5 Page - Toshiba Semiconductor

Part # TPCF8201
Description  TOSHIBA Field Effect Transistor Silicon N Channel MOS Type (U-MOS III)
PDF  7 Pages
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Manufacturer  TOSHIBA [Toshiba Semiconductor]
Direct Link  http://www.semicon.toshiba.co.jp/eng
Logo TOSHIBA - Toshiba Semiconductor

TPCF8201 Datasheet(HTML) 5 Page - Toshiba Semiconductor

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TPCF8201
2007-01-16
5
Ambient temperature Ta (°C)
RDS (ON) – Ta
160
−40
0
40
80
120
−80
120
100
80
60
20
0
ID = 3A,1.5A,0.75A
VGS = 2.0 V
VGS = 4.5 V
ID = 3A,1.5A,0.75A
VGS = 2.5 V
ID = 1.5A,0.75A
ID = 3A
40
Common source
Pulse test
IDR – VDS
Drain-source voltage VDS (V)
0
0.1
−0.4
0.3
0.5
1
3
5
10
−0.8
−1.2
VGS = 0 V
10
2.5
2.0
Common source
Ta
= 25°C
Pulse test
Capacitance – VDS
Drain-source voltage VDS (V)
10
0.1
100
1000
1
3
5
10
30 50
100
Ciss
Coss
Crss
Common source
VGS = 0 V
f
= 1 MHz
Ta
= 25°C
Vth – Ta
Ambient temperature Ta (°C)
0
0.4
0.6
0.8
1.2
−80
−40
0
40
80
120
160
1
0.2
Common source
VDS = 10 V
ID = 200μA
Pulse test
PD – Ta
Ambient temperature Ta (°C)
0
0
40
80
120
160
0.4
0.8
1.2
1.6
2
(4)
(1)
(3)
(2)
t
= 5 s
Device mounted on a glass-epoxy board (a) (Note 2a)
(1) Single-device operation (Note 3a)
(2) Single-device value at dual operation (Note 3b)
Device mounted on a glass-epoxy board (b) (Note 2b)
(3) Single-device operation (Note 3a)
(4) Single-device value at dual operation (Note 3b)
Total gate charge Qg (nC)
Dynamic input / output
characteristics
0
8
VDD = 16 V
VDS
4
8
10
0
2
4
6
4
8
12
16
20
0
2
4
6
VGS
Common source
ID = 3 A
Ta
= 25°C
Pulse test



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