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M58BW016DB Datasheet(PDF) 54 Page - STMicroelectronics |
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M58BW016DB Datasheet(HTML) 54 Page - STMicroelectronics |
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54 / 69 page ![]() Part numbering M58BW016DT, M58BW016DB, M58BW016FT, M58BW016FB 54/69 9 Part numbering Note: Devices are shipped from the factory with the memory content bits erased to ’1’. For a list of available options (speed, package, etc.) or for further information on any aspect of this device, please contact the ST Sales Office nearest to you. Table 24. Ordering information scheme Example: M58 BW016D T 80 T 3 F T Device type M58 Architecture B = Burst mode Operating voltage W = VDD = 2.7 V to 3.6 V; VDDQ = VDDQIN = 2.4 to VDD Device function 016D = 16 Mbit (x 32), boot block, burst, 0.15 µm 016F = 16 Mbit (x 32), boot block, burst, 0.11 µm Array matrix T = Top boot B = Bottom boot Speed 70 = 70 ns 80 = 80 ns Package T = PQFP80 ZA = LBGA 10 × 12 mm Temperature range 3 = Automotive grade certified(1), –40 to 125 °C 1. Qualified & characterized according to AEC Q100 & Q003 or equivalent, advanced screening according to AEC Q001 & Q002 or equivalent. Version F = Silicon version F Option T = Tape and reel packing F = ECOPACK package, tape and reel packing |
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