QPD2160D

1600 um Discrete GaAs pHEMT

Data Sheet Rev. A, August 2022

Subject to change without notice. | All rights reserved

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Product Overview

The Qorvo QPD2160D is a discrete 1600 micron pHEMT

which operates from DC to 20 GHz. The QPD2160D is

fabricated using Qorvo’s proven standard 0.25 um power

pHEMT

production

process.

This

process

features

advanced techniques to optimize microwave power and

efficiency at high drain bias operating conditions.

The QPD2160D typically provides 32.5 dBm of output

power at P1dB with gain of 10.4 dB and 63% power-added

efficiency at 1 dB compression. This performance makes

the QPD2160D appropriate for high efficiency applications.

The protective overcoat layer with silicon nitride provides a

level of environmental robustness and scratch protection.

The QPD2160D is lead-free and RoHS compliant.

Key Features

• Frequency: DC – 20 GHz

• Output Power (P1dB)1: 32.5 dBm

• Typical Gain1: 10.4 dB

• Typical PAE1dB1: 63%

• Noise Figure1: 1 dB

• No Vias

• Technology: 0.25 um GaAs pHEMT

• Chip Dimensions: 0.41 x 0.54 x 0.10 mm

Notes:

1. @ 12 GHz

Functional Block Diagram

Pad Dimensions

Terminal

71 um x 71 um

Gate

71 um x 71 um

Drain

96 um x 71 um

Source (Outermost)

96 um x 106 um

Source (Center)

Applications

• Defense and Aerospace

• High-Reliability

• Test and Measurement

• Commercial

• Broadband Wireless

Ordering Information

Part Number

Description

QPD2160D

1600 um GaAs pHEMT

Gate

Drain

Source