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TCR3DM285A Datasheet(PDF) 5 Page - Toshiba Semiconductor

Part # TCR3DM285A
Description  TOSHIBA CMOS Linear Integrated Circuit Silicon Monolithic
PDF  20 Pages
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Manufacturer  TOSHIBA [Toshiba Semiconductor]
Direct Link  http://www.semicon.toshiba.co.jp/eng
Logo TOSHIBA - Toshiba Semiconductor

TCR3DM285A Datasheet(HTML) 5 Page - Toshiba Semiconductor

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TCR3DMxxA series
2024-10-28
Rev.5.0
© 2023-2024
Toshiba Electronic Devices & Storage Corporation
5
9.
Electrical Characteristics
(Unless otherwise specified, VIN = VOUT + 1.0 V, CIN = 1.0 μF, COUT = 1.0 μF)
Characteristics
Symbol
Test Condition
Tj = 25 °C
Tj = -40 to 85 °C
(Note 8)
Unit
Min
Typ.
Max
Min
Max
Output voltage accuracy
VOUT
IOUT = 50 mA
VIN = VOUT + 1.0 V
(Note 3)
VOUT < 1.8 V
-18
―
+18
―
―
mV
1.8V
≤ VOUT
-1.0
―
+1.0
―
―
%
Line regulation
Reg・line
VOUT + 0.5 V ≤ VIN ≤ 5.5 V
IOUT = 1 mA
―
1
―
―
―
mV
Load regulation
Reg・load 1 mA
≤ IOUT ≤ 300 mA
―
18
―
―
52
mV
Quiescent current
IB(ON)
IOUT = 0 mA
VIN = 5.5 V
(Note 5)
VOUT = 4.5 V
―
86
―
―
159
μA
Stand-by current
IB (OFF)
VCT = 0 V, VIN = 5.5 V
(Note 5)
―
0.1
―
―
1
μA
Control pull down current
ICT
―
―
0.1
―
―
0.2
μA
Drop-out voltage
(Note 9)
VDO
IOUT = 300 mA
VOUT = 1.8 V
―
297
335
―
389
mV
VOUT = 2.5 V
―
216
262
―
296
mV
VOUT = 3.3 V
―
175
206
―
242
mV
VOUT = 4.5 V
―
148
179
―
231
mV
Output noise voltage
VNO
IOUT = 10 mA
10 Hz ≤ f ≤ 100 kHz, Ta = 25 °C (Note 4)
―
38
―
―
―
μVrms
Ripple rejection ratio
R.R.
VIN = 3.5 V
VOUT = 2.5 V
IOUT = 10 mA,
VIN Ripple = 500 mVp-p,
Ta = 25 °C (Note 4)
f = 100 Hz
―
75
―
―
―
dB
f = 1 kHz
―
72
―
―
―
f = 10 kHz
―
54
―
―
―
f = 100 kHz
―
48
―
―
―
f = 1 MHz
―
55
―
―
―
Load transient response
⊿VOUT
IOUT = 1 mA → 300 mA (Note 4) (Note 6)
―
-80
―
―
―
mV
IOUT = 300 mA → 1 mA (Note 4) (Note 6)
―
+80
―
―
―
Output current limit
ICL
VOUT = VOUT(NOM)*90 %
(Note 7)
―
―
―
320
650
mA
Thermal shutdown threshold
TSDH
TJ rising
―
160
―
―
―
°C
TSDL
TJ falling
―
130
―
―
―
°C
Control voltage (HIGH)
VCTH
Control pin input voltage “HIGH”
―
―
0.8
5.5
V
Control voltage (LOW)
VCTL
Control pin input voltage
“LOW”
―
―
0
0.4
V
Discharge on resistance
RSD
(Note 4)
―
45
―
―
―
Ω
Note 3: stable state with fixed IOUT condition
Note 4: VOUT = 2.5 V
Note 5: except Control pull down current (ICT)
Note 6: tr = tf = 1.0 μs (Defined when 10 % to 90 % is 0.8 µs)
Note 7: Pulse measurement
Note 8: This parameter is warranted by design.
Note 9: VDO = VIN1 - (VOUT1 x 0.97)
VOUT1 is the output voltage when VIN = VOUT + 1.0 V.
VIN1 is the input voltage at which the output voltage becomes 97 % of VOUT1 after gradually
decreasing the input voltage.



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