TCR3DMxxA series

2024-10-28

Rev.5.0

© 2023-2024

Toshiba Electronic Devices & Storage Corporation

2

4.

Absolute Maximum Ratings (Note) (Ta = 25 °C)

Characteristics

Symbol

Rating

Unit

Input voltage

VIN

-0.3 to 6.0

V

Control voltage

VCT

-0.3 to 6.0

V

Output voltage

VOUT

-0.3 to VIN + 0.3 ≤ 6.0

V

Power dissipation

PD

420

(Note1)

mW

Junction temperature

Tj

150

°C

Storage temperature range

Tstg

−55 to 150

°C

Note:

Using continuously under heavy loads (e.g. the application of high temperature/current/voltage and the significant

change in temperature, etc.) may cause this product to decrease in the reliability significantly even if the operating

conditions (i.e. operating temperature/current/voltage, etc.) are within the absolute maximum ratings and the

operating ranges.

Please

design the appropriate reliability upon reviewing the Toshiba Semiconductor Reliability Handbook (“Handling

Precautions”/“Derating Concept and Methods”) and individual reliability data (i.e. reliability test report and estimated

failure rate, etc).

Note1:

Rating at mounting on a board

Glass epoxy(FR4) board dimension: 40 mm x 40 mm x 1.6mm, both sides of board.

Metal pattern ratio: a surface approximately 50%, the reverse side approximately 50 %

Through hole hall: diameter 0.5 mm x 24 pcs

5.

Pin Assignment (Top view)

6.

Operating Ranges

Note 2: Please refer to Dropout Voltage and use it within Absolute Maximum Ratings Junction temperature and Operation

Temperature Ranges.

Characteristics

Symbol

Rating

Unit

Input voltage

VIN

1.5 to

5.5

(Note 2)

V

Control voltage

VCT

0 to 5.5

V

Output voltage

VOUT

1.0 to 4.5

V

Output current

IOUT

DC

300

mA

Operation Temperature

Topr

-40 to 85

°C

Output Capacitance

COUT

≥ 1.0

µF

Input Capacitance

CIN

≥ 1.0

µF

*Center electrode should be connected to GND or Open

VOUT

CONTROL

GND

VIN

1

2

4

3

*