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TCR3DM285A Datasheet(PDF) 1 Page - Toshiba Semiconductor |
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TCR3DM285A Datasheet(HTML) 1 Page - Toshiba Semiconductor |
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1 / 20 page ![]() TCR3DMxxA series 2024-10-28 Rev.5.0 © 2023-2024 Toshiba Electronic Devices & Storage Corporation 1 TOSHIBA CMOS Linear Integrated Circuit Silicon Monolithic TCR3DMxxA series 300 mA CMOS Low Drop-Out Regulator with inrush current protection circuit 1. Description The TCR3DMxxA series are CMOS general-purpose single-output voltage regulators with an on/off control input, featuring low dropout voltage, low output noise voltage, fast load transient response and low inrush current. These voltage regulators are available in fixed output voltages between 1.0 V and 4.5 V and capable of driving up to 300 mA. They feature Overcurrent protection, Thermal shutdown, Inrush current protection circuit and Auto-discharge. The TCR3DMxxA series is offered in the ultra small plastic mold package DFN4D (1.0 mm x 1.0 mm; t 0.37 mm (typ.)) and has a low dropout voltage of 216 mV (2.5 V output, IOUT = 300 mA) with low output noise voltage of 38 μVrms (2.5 V output). As small ceramic input and output capacitors 1.0 μF can be used with the TCR3DMxxA series, these devices are ideal for portable applications that require high-density board assembly such as cellular phones. 2. Applications Power IC developed for portable applications 3. Features • Ultra small package DFN4D (1.0 mm x 1.0 mm; t 0.37 mm (typ.)) • Wide range output voltage line up (VOUT = 1.0 to 4.5 V) • Low dropout voltage VDO = 175 mV (typ.) at 3.3 V output, IOUT = 300 mA VDO = 216 mV (typ.) at 2.5 V output, IOUT = 300 mA VDO = 297 mV (typ.) at 1.8 V output, IOUT = 300 mA • Low output noise voltage (VNO = 38 μVrms (typ.) at 10Hz ≤ f ≤ 100kHz) • High ripple rejection ratio (72 dB (typ.) at 2.5 V output, IOUT = 10 mA, f = 1 kHz) • Fast load transient response (±80 mV (typ.) at 2.5 V output, IOUT = 1 mA ⇔ 300 mA) • Overcurrent protection • Thermal shutdown • Inrush current protection circuit • Auto-discharge • Pull down connection between CONTROL and GND • Ceramic capacitors can be used (CIN = 1.0 μF, COUT = 1.0 μF) DFN4D Weight: 1.1 mg (typ.) Start of commercial production 2023-11 |
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