0

1

10

100

1000

110

130

150

170

190

210

230

Continuous T

J - °C

Electromigration Fail Mode

INA271-HT

www.ti.com

SBOS521D – SEPTEMBER 2010 – REVISED AUGUST 2013

ELECTRICAL CHARACTERISTICS (continued)

At TA = +25°C, VS = +5V, VCM = +12V, VSENSE = 100mV, and PRE OUT connected to BUF IN, unless otherwise noted.

TA = –55°C to 125°C

TA = –55°C to 175°C

TA = 210°C

PARAMETER

CONDITIONS

MIN

TYP

MAX

MIN

TYP

MAX

MIN

TYP

MAX

UNIT

NOISE < RTI(7)

Voltage Noise

en

40

40

nV/

√Hz

Density

POWER SUPPLY

Operating Range

VS

2.7

18

2.7

18

V

VOUT = 2V

740

1200

1160

1600

Quiescent Current

IQ

μA

VSENSE = 0mV

350

950

895

1600

TEMPERATURE RANGE

Specified Temperature Range

–55

125

–55

210

°C

Operating Temperature Range

–55

125

–55

210

°C

(7)

RTI means Referred-to-Input.

(1)

See datasheet for absolute maximum and minimum recommended operating conditions.

(2)

Silicon operating life design goal is 10 years at 105°C junction temperature (does not include package interconnect

life).

Figure 1. INA271SKGD1/INA271SKGD2/INA271SHKJ/INA271SHKQ Operating Life Derating Chart

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