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2SC3326 Datasheet(PDF) 3 Page - Toshiba Semiconductor |
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2SC3326 Datasheet(HTML) 3 Page - Toshiba Semiconductor |
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3 / 5 page ![]() 2SC3326 2021-04-25 3 © 2018 - 2021 Toshiba Electronic Devices & Storage Corporation Collector emitter voltage VCE (V) IC – VCE Collector emitter voltage VCE (V) IC – VCE (Reverse region) Collector current IC (mA) hFE – IC Base-emitter voltage VBE (V) IC – VBE Collector current IC (mA) VCE (sat) – IC Collector current IC (mA) fT – IC 3 5 500 100 30 300 1 Common emitter VCE = 6 V Ta = 25°C 0.1 0.3 10 50 100 10 30 1.2 0 300 1.6 100 200 0.8 Common emitter VCE = 2 V 0 0.4 Ta = 100°C -25 25 12 0 6 4 0 30 50 20 2 40 10 8 IB = 20 μA 160 0 140 120 100 80 60 40 Common emitter Ta = 25°C 10 −10 0 −6 −4 0 −6 −10 −4 −2 −8 −2 −8 Common emitter Ta = 25°C IB = 10 μA 0 20 50 40 30 −12 30 50 3000 100 500 10 0.3 1 300 1000 5000 3 100 -25 Ta = 100°C 25 Common emitter VCE = 6 V VCE = 2 V 30 1 300 300 3 30 10 Common emitter IC/IB = 10 Ta = 25°C 0.1 0.3 500 100 10 5 50 1 3 100 |
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