2SC3326 datasheet(2/5 Pages) TOSHIBA

Part #	2SC3326

Description	TOSHIBA Transistor Silicon NPN Epitaxial Type (PCT process)

PDF	5 Pages

Scroll/Zoom	100%

Manufacturer	TOSHIBA [Toshiba Semiconductor]

Direct Link	http://www.semicon.toshiba.co.jp/eng

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2 / 5 page

2SC3326

2021-04-25

Toshiba Electronic Devices & Storage Corporation

Electrical Characteristics (Ta = 25°C)

Characteristics

Symbol

Test Condition

Min

Typ.

Max

Unit

Collector cut-off current

ICBO

VCB = 50 V, IE = 0 A

―

―

0.1

μA

Emitter cut-off current

IEBO

VEB = 25 V, IC = 0 A

―

0.1

μA

DC current gain

hFE

(Note)

VCE = 2 V, IC = 4 mA

200

―

1200

―

Collector-emitter saturation voltage

VCE (sat)

IC = 30 mA, IB = 3 mA

―

0.042

0.1

Base-emitter voltage

VBE

VCE = 2 V, IC = 4 mA

―

0.61

―

Transition frequency

VCE = 6 V, IC = 4 mA

―

MHz

Collector output capacitance

Cob

VCB = 10 V, IE = 0 A, f = 1 MHz

―

4.8

Switching time

Turn-on time

ton

Duty cycle

≤ 2%

―

160

―

Storage time

tstg

―

500

―

Fall time

―

130

―

Note: hFE classification

A: 200 to 700, B: 350 to 1200

OUTPUT

4 k

VCC

= 12 V

VBB

= −3 V

INPUT

10 V

μs

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