2SC3326

2021-04-25

1

© 2018 - 2021

Toshiba Electronic Devices & Storage Corporation

TOSHIBA Transistor

Silicon NPN Epitaxial Type (PCT process)

2SC3326

For Muting and Switching Applications

 AEC-Q101 Qualified (Note1).

 High emitter-base voltage: VEBO = 25 V

 High reverse hFE: Reverse hFE = 150 (typ.) (VCE = −2 V, IC = −4 mA)

 Low on resistance: RON = 1 Ω (typ.) (IB = 5 mA)

 High DC current gain: hFE = 200 to 1200

 Small package

Note1: For detail information, please contact our sales.

Absolute Maximum Ratings (Ta = 25°C)

Characteristics

Symbol

Rating

Unit

Collector-base voltage

VCBO

50

V

Collector-emitter voltage

VCEO

20

V

Emitter-base voltage

VEBO

25

V

Collector current

IC

300

mA

Base current

IB

60

mA

Collector power dissipation

PC (Note 2, 4)

200

mW

PC (Note 3)

150

Junction temperature

Tj (Note 2)

150

°C

Tj (Note 3)

125

Storage temperature range

Tstg (Note 2)

−55 to 150

°C

Tstg (Note 3)

−55 to 125

Note: Using continuously under heavy loads (e.g. the application of high temperature/current/voltage and the significant

change in temperature, etc.) may cause this product to decrease in the reliability significantly even if the operating

conditions (i.e. operating temperature/current/voltage, etc.) are within the absolute maximum ratings.

Please design the appropriate reliability upon reviewing the Toshiba Semiconductor Reliability Handbook (“Handling

Precautions”/“Derating Concept and Methods”) and individual reliability data (i.e. reliability test report and estimated

failure rate, etc).

Note 2: For devices with the ordering part number ending in LF(T.

Note 3: For devices with the ordering part number in other than LF(T.

Note 4: Mounted on a FR4 board. (25.4 mm × 25.4 mm × 1.6 mm, Cu pad: 0.8 mm2 × 3)

Marking

Unit: mm

JEDEC

TO-236MOD

JEITA

SC-59

TOSHIBA

2-3F1A

Weight: 0.012 g (typ.)

Start of commercial production

1982-12

Part No.(abbreviation code)

C C A

hFE Rank