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M58LR128GT Datasheet(PDF) 68 Page - STMicroelectronics

Part # M58LR128GT
Description  128 Mbit (8Mb x16, Multiple Bank, Multi-Level, Burst) 1.8V Supply Flash Memory
PDF  84 Pages
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Manufacturer  STMICROELECTRONICS [STMicroelectronics]
Direct Link  http://www.st.com
Logo STMICROELECTRONICS - STMicroelectronics

M58LR128GT Datasheet(HTML) 68 Page - STMicroelectronics

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Note: 1. The variable P is a pointer which is defined at CFI offset 015h.
2. Bank Regions. There are two Bank Regions, see Tables 30, 31, 32, 33, 34, and 35 in APPENDIX A.
Table 45. Bank and Erase Block Region 2 Information
(P+38)h = 142h
02h
Bank Regions 1 (Erase Block Type 2): BIts per cell, internal
ECC
Bits 0-3: bits per cell in erase region
Bit 4: reserved for “internal ECC used”
BIts 5-7: reserved
(P+39)h = 143h
03h
Bank Region 1 (Erase Block Type 2): Page mode and
Synchronous mode capabilities
Bit 0: Page-mode reads permitted
Bit 1: Synchronous reads permitted
Bit 2: Synchronous writes permitted
Bits 3-7: reserved
Flash memory (top)
Flash memory (bottom)
Description
Offset
Data
Offset
Data
(P+32)h = 13Ch
01h
(P+3A)h = 144h
0Fh
Number of identical banks within bank region 2
(P+33)h = 13Dh
00h
(P+3B)h = 145h
00h
(P+34)h = 13Eh
11h
(P+3C)h = 146h
11h
Number of program or erase operations allowed in Bank
Region 2:
Bits 0-3: Number of simultaneous program operations
Bits 4-7: Number of simultaneous erase operations
(P+35)h = 13Fh
00h
(P+3D)h = 147h
00h
Number of program or erase operations allowed in other
banks while a bank in this region is programming
Bits 0-3: Number of simultaneous program operations
Bits 4-7: Number of simultaneous erase operations
(P+36)h = 140h
00h
(P+3E)h = 148h
00h
Number of program or erase operations allowed in other
banks while a bank in this region is erasing
Bits 0-3: Number of simultaneous program operations
Bits 4-7: Number of simultaneous erase operations
(P+37)h = 141h
02h
(P+3F)h = 149h
01h
Types of erase block regions in Bank Region 2
n = number of erase block regions with contiguous same-size
erase blocks.
Symmetrically blocked banks have one blocking region.(2)
(P+38)h = 142h
06h
(P+40)h = 14Ah
07h
Bank Region 2 Erase Block Type 1 Information
Bits 0-15: n+1 = number of identical-sized erase blocks in
each bank
Bits 16-31: n×256 = number of bytes in erase block region
(P+39)h = 143h
00h
(P+41)h = 14Bh
00h
(P+3A)h = 144h
00h
(P+42)h = 14Ch
00h
(P+3B)h = 145h
02h
(P+43)h = 14Dh
02h
(P+3C)h = 146h
64h
(P+44)h = 14Eh
64h
Bank Region 2 (Erase Block Type 1)
Minimum block erase cycles × 1000
(P+3D)h = 147h
00h
(P+45)h = 14Fh
00h
(P+3E)h = 148h
02h
(P+46)h = 150h
02h
Bank Region 2 (Erase Block Type 1): BIts per cell, internal
ECC
Bits 0-3: bits per cell in erase region
Bit 4: reserved for “internal ECC used”
BIts 5-7: reserved
Flash memory (top)
Flash memory (bottom)
Description
Offset
Data
Offset
Data



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