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STM32H523CCU6 Datasheet(PDF) 109 Page - STMicroelectronics |
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STM32H523CCU6 Datasheet(HTML) 109 Page - STMicroelectronics |
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109 / 228 page ![]() DS14540 Rev 1 109/228 STM32H523xx Electrical characteristics 197 v Table 33. Typical and maximum current consumption in Stop mode Parameter Conditions Typ LDO Max(1) Unit TJ = 25°C TJ = 85°C TJ = 105°C TJ = 130°C IDD (stop) Supply current in Stop Flash memory in low power mode, SRAMs ON SVOS3 0.26 0.79 6.34 11.45 22.31 mA SVOS4 0.19 0.59 5.05 9.21 18.13 SVOS5 0.15 0.43 3.97 7.42 14.99 Flash memory in normal mode, SRAMs ON SVOS3 0.27 0.81 6.36 11.47 22.35 SVOS4 0.21 0.61 5.07 9.24 18.17 Flash memory in low power mode, SRAMs OFF except SRAM2 16 Kbytes ON SVOS3 0.20 0.65 5.08 9.21 18.05 SVOS4 0.15 0.48 4.05 7.41 14.68 SVOS5 0.10 0.32 2.84 5.32 10.81 Flash memory in low power mode, SRAMs OFF except SRAM2 ON SVOS3 0.21 0.70 5.49 9.93 19.42 SVOS4 0.16 0.52 4.37 7.99 15.79 SVOS5 0.16 0.36 3.20 5.98 12.12 1. Evaluated by characterization - Not tested in production. Table 34. Typical and maximum current consumption in Standby mode Symbol Parameter Conditions Typ(1) Max(1) Unit Backup RAM RTC and LSE(2) 1.8 V 2.4 V 3 V 3.3 V TJ = 25 °C TJ = 85 °C TJ = 105 °C TJ = 130 °C IDD(standby) Supply current in standby mode, IWDG OFF OFF OFF 2.6 2.8 3.0 3.2 4.3 8.8 16.5 42.6 μA ON OFF 3.8 4.1 4.4 4.6 6.4 16.9 31.5 75.7 OFF ON 2.9 3.2 3.5 3.7 5.3 10.0 17.8 44.6 ON ON 4.2 4.5 4.9 5.1 7.4 18.1 32.8 77.7 1. Evaluated by characterization - Not tested in production. 2. LSE is in medium-low drive mode. Table 35. Typical and maximum current consumption in VBAT mode Symbol Parameter Conditions Typ(1) Max(1) Unit Backup RAM RTC and LSE(2) 1.62 V 2.4 V 3 V 3.3 V TJ = 25 °C TJ = 85 °C TJ = 105 °C TJ = 130 °C IDD(VBAT) Supply current in VBAT mode OFF OFF 0.01 0.01 0.02 0.02 0.2 2.0 4.9 14.9 μA ON OFF 1.1 1.1 1.2 1.30 2.7 12.7 23.8 52.2 OFF ON 0.5 0.5 0.5 0.6 1.2 3.2 6.2 16.9 ON ON 1.6 1.6 1.6 1.8 3.7 13.9 25.1 54.2 |
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