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STM32F205RFT6 Datasheet(PDF) 141 Page - STMicroelectronics |
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STM32F205RFT6 Datasheet(HTML) 141 Page - STMicroelectronics |
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141 / 184 page  DocID15818 Rev 15 141/184 STM32F20xxx Electrical characteristics 183 Figure 64. Synchronous non-multiplexed PSRAM write timings td(CLKL-NADVH) FSMC_CLK low to FSMC_NADV high 4 - ns td(CLKL-AV) FSMC_CLK low to FSMC_Ax valid (x=16…25) - 0 ns td(CLKL-AIV) FSMC_CLK low to FSMC_Ax invalid (x=16…25) 3 - ns td(CLKH-NOEL) FSMC_CLK high to FSMC_NOE low - 1 ns td(CLKL-NOEH) FSMC_CLK low to FSMC_NOE high 1.5 - ns tsu(DV-CLKH) FSMC_D[15:0] valid data before FSMC_CLK high 8 - ns th(CLKH-DV) FSMC_D[15:0] valid data after FSMC_CLK high 0 - ns 1. CL = 30 pF. 2. Guaranteed by characterization results, not tested in production. Table 79. Synchronous non-multiplexed PSRAM write timings(1)(2) Symbol Parameter Min Max Unit tw(CLK) FSMC_CLK period 2THCLK- 1 - ns td(CLKL-NExL) FSMC_CLK low to FSMC_NEx low (x=0..2) - 1 ns td(CLKL-NExH) FSMC_CLK low to FSMC_NEx high (x= 0…2) 1 - ns Table 78. Synchronous non-multiplexed NOR/PSRAM read timings(1)(2) (continued) Symbol Parameter Min Max Unit |
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