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SN888CD Datasheet(PDF) 13 Page - Texas Instruments

Part # SN888CD
Description  Bus-Polarity Correcting RS-485 Transceiver for E-Meters
PDF  26 Pages
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Manufacturer  TI2 [Texas Instruments]
Direct Link  https://www.ti.com
Logo TI2 - Texas Instruments

SN888CD Datasheet(HTML) 13 Page - Texas Instruments

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RC
RD
CS
High-Voltage
Pulse
Generator
Device
Under
Test
40
35
30
25
20
15
10
5
0
Time - ns
0
50
100
150
200
250
300
10kV IEC
10kV HBM
330
(1.5k)
150pF
(100pF)
50M
(1M)
RxD
TxD
DRV
MCU
R
RE
DE
D
A
B
Vcc
GND
1
2
3
4
7
6
5
3.3V
10k
XCVR
8
5V
0.1µF
BAS70
RCV
SN888C
www.ti.com
SLLSEI4 – SEPTEMBER 2013
3-V to 5-V Interface
Interfacing the SN888C device to a 3-V controller is easy. Because the 5-V logic inputs of the transceiver accept
3-V input signals, they can be directly connected to the controller I/O. The 5-V receiver output, R, however, must
be level-shifted by a Schottky diode and a 10-k resistor to connect to the controller input (see Figure 15). When
R is high, the diode is reverse biased and the controller supply potential lies at the controller RxD input. When R
is low, the diode is forward biased and conducts. Only in this case, the diode forward voltage of 0.2 V lies at the
controller RxD input.
Figure 15. 3-V to 5-V Interface
Noise Immunity
The input sensitivity of a standard RS-485 transceiver is ±200 mV. When the differential input voltage, VID, is
greater than +200 mV, the receiver output turns high, for VID < –200 mV the receiver outputs low.
The SN888C transceiver implements high receiver noise-immunity by providing a typical positive-going input
threshold of 35 mV and a minimum hysteresis of 40 mV. In the case of a noisy input condition, a differential
noise voltage of up to 40 mVPP can be present without causing the receiver output to change states from high to
low.
Transient Protection
The bus terminals of the SN888C transceiver family possess on-chip ESD protection against ±16 kV HBM and
±12 kV IEC61000-4-2 contact discharge. The International Electrotechnical Commision (IEC) ESD test is far
more severe than the HBM ESD test. The 50% higher charge capacitance, CS, and 78% lower discharge
resistance, RD of the IEC model produce significantly higher discharge currents than the HBM model.
As stated in the IEC 61000-4-2 standard, contact discharge is the preferred transient protection test method.
Although IEC air-gap testing is less repeatable than contact testing, air discharge protection levels are inferred
from the contact discharge test results.
Figure 16. HBM and IEC-ESD Models and Currents in Comparison (HBM Values in Parenthesis)
Copyright © 2013, Texas Instruments Incorporated
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