INA129-EP

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SBOS508A – DECEMBER 2009 – REVISED DECEMBER 2015

Electrical Characteristics (continued)

At TA = 25°C, VS = ±15 V, RL = 10 kΩ (unless otherwise noted)

TA = 25°C

TA = 25°C

PARAMETER

TEST CONDITIONS

UNIT

MIN

TYP

MAX

MIN

TYP

MAX

G = 1

±0.05%

±0.1%

Overtemperature

±0.15%

G = 10

±0.02%

±0.5%

Gain error

Overtemperature

±0.65%

G = 100

±0.05%

±0.65%

Overtemperature

±1.1%

G = 1000

±0.5%

±2%

Gain vs temperature(2)

G = 1

±1

±10

ppm/°C

49.4-k

Ω

±25

±100

ppm/°C

resistance(2)(3)

VO = ±13.6 V,

±0.0001

±0.0018

G = 1

Overtemperature

±0.0035

G = 10

±0.0003

±0.0035

% of

Nonlinearity

Overtemperature

±0.0055

FSR

G = 100

±0.0005

±0.0035

Overtemperature

±0.0055

G = 1000

±0.001

See (4)

OUTPUT

(V+)

−

Positive

RL = 10 kΩ

(V+)

− 0.9

1.4

Voltage

V

(V

−) +

Negative

RL = 10 kΩ

(V

−) + 0.8

1.4

Load capacitance

1000

pF

stability

Short-circuit current

+6/

−15

mA

FREQUENCY RESPONSE

G = 1

1300

G = 10

700

Bandwidth,

−3 dB

kHz

G = 100

200

G = 1000

20

VO = ±10 V,

Slew rate

4

V/µs

G = 10

G = 1

7

G = 10

7

Settling time, 0.01%

µs

G = 100

9

G = 1000

80

Overload recovery

50% overdrive

4

µs

POWER SUPPLY

Voltage range

±2.25

±15

±18

V

VIN = 0 V

±700

±750

Current, total

µA

Overtemperature

±1200

TEMPERATURE RANGE

Specification

−55

125

°C

Operating

−55

125

°C

(2)

Specified by wafer test.

(3)

Temperature coefficient of the 49.4-k

Ω term in the gain equation.

(4)

Nonlinearity measurements in G = 1000 are dominated by noise. Typical nonlinearity is ±0.001%.

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