Nexperia

PDTC143X/123J/143Z/114Y/124XQB-Q

series

50 V, 100 mA NPN resistor-equipped transistors

10. Characteristics

Table 8. Characteristics

Tamb = 25 °C unless otherwise specified.

Symbol

Parameter

Conditions

Min

Typ

Max Unit

V(BR)CBO

collector-base

breakdown voltage

IC = 100 µA; IE = 0 A

50

-

-

V

V(BR)CEO

collector-emitter

breakdown voltage

IC = 2 mA; IB = 0 A

50

-

-

V

ICBO

collector-base cut-off

current

VCB = 50 V; IE = 0 A

-

-

100

nA

VCE = 30 V; IB = 0 A

-

-

100

nA

ICEO

collector-emitter cut-off

current

VCE = 30 V; IB = 0 A; Tj = 150 °C

-

-

5

µA

emitter-base cut-off current

PDTC143XQB-Q

-

-

600

µA

PDTC123JQB-Q

-

-

180

µA

PDTC143ZQB-Q

-

-

170

µA

PDTC114YQB-Q

-

-

150

µA

IEBO

PDTC124XQB-Q

VEB = 5 V; IC = 0 A

-

-

120

µA

DC current gain

PDTC143XQB-Q

50

-

-

PDTC123JQB-Q

100

-

-

PDTC143ZQB-Q

VCE = 5 V; IC = 10 mA

100

-

-

PDTC114YQB-Q

100

-

-

hFE

PDTC124XQB-Q

VCE = 5 V; IC = 5 mA

80

-

-

collector-emitter saturation voltage

PDTC143XQB-Q

IC = 10 mA; IB = 0.5 mA

-

-

100

mV

PDTC123JQB-Q

-

-

100

mV

PDTC143ZQB-Q

-

-

100

mV

PDTC114YQB-Q

IC = 5 mA; IB = 0.25 mA

-

-

100

mV

VCEsat

PDTC124XQB-Q

IC = 10 mA; IB = 0.5 mA

-

-

100

mV

off-state input voltage

PDTC143XQB-Q

-

0.8

0.3

V

PDTC123JQB-Q

-

0.6

0.5

V

PDTC143ZQB-Q

-

0.6

0.5

V

PDTC114YQB-Q

-

0.7

0.5

V

VI(off)

PDTC124XQB-Q

VCE = 5 V ; IC = 100 µA

-

0.8

0.5

V

on-state input voltage

PDTC143XQB-Q

VCE = 0.3 V ; IC = 20 mA

2.5

1.5

-

V

PDTC123JQB-Q

VCE = 0.3 V ; IC = 5 mA

1.1

0.75

-

V

PDTC143ZQB-Q

VCE = 0.3 V ; IC = 5 mA

1.3

0.9

-

V

PDTC114YQB-Q

VCE = 0.3 V ; IC = 1 mA

1.4

0.8

-

V

VI(on)

PDTC124XQB-Q

VCE = 0.3 V ; IC = 2 mA

2.0

1.1

-

V

PDTC143X_TO_124XQB-Q_SER

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©

Nexperia B.V. 2021. All rights reserved

Product data sheet

Rev. 1 — 1 October 2021

5 / 20