PDTC143X/123J/143Z/114Y/124XQB-

Q series

50 V, 100 mA NPN resistor-equipped transistors

Rev. 1 — 1 October 2021

Product data sheet

1. General description

100 mA NPN Resistor-Equipped Transistor (RET) family in an ultra small DFN1110D-3 (SOT8015)

leadless Surface-Mounted Device (SMD) plastic package with side-wettable flanks.

Table 1. Product overview

R1

R2

Package

Type number

kΩ

kΩ

Nexperia

JEDEC

PNP complement:

PDTC143XQB-Q

4.7

10

PDTA143XQB-Q

PDTC123JQB-Q

2.2

47

PDTA123JQB-Q

PDTC143ZQB-Q

4.7

47

PDTA143ZQB-Q

PDTC114YQB-Q

10

47

PDTA114YQB-Q

PDTC124XQB-Q

22

47

SOT8015

MO-340BA

PDTA124XQB-Q

2. Features and benefits

• 100 mA output current capability

• Built-in resistors

• Simplifies circuit design

• Reduces component count

• Reduces pick and place costs

• Low package height of 0.5 mm

• Suitable for Automatic Optical Inspection (AOI) of solder joint

• Qualified according to AEC-Q101 and recommended for use in automotive applications

3. Applications

• Digital applications

• Cost saving alternative for BC847-Q series in digital applications

• Controlling IC inputs

• Switching loads

4. Quick reference data

Table 2. Quick reference data

Tamb = 25 °C unless otherwise specified.

Symbol

Parameter

Conditions

Min

Typ

Max

Unit

VCEO

collector-emitter voltage

open base

-

-

50

V

IO

output current

-

-

100

mA