Nexperia

PDTC143X/123J/143Z/114Y/124XQB-Q

series

50 V, 100 mA NPN resistor-equipped transistors

006aac812

IC (mA)

10-1

10

1

1

VI(off)

(V)

10-1

(1)

(2)

(3)

VCE = 5 V

(1) Tamb = -40 °C

(2) Tamb = 25 °C

(3) Tamb = 100 °C

Fig. 14. PDTC123JQB-Q: Off-state input voltage as a

function of collector current; typical values

VCB (V)

0

50

40

20

30

10

006aac813

1

2

3

Cc

(pF)

0

f = 1 MHz

Tamb = 25 °C

Fig. 15. PDTC123JQB-Q: Collector capacitance as

a function of collector-base voltage; typical

values

IC (mA)

10-1

102

10

1

006aac819

102

10

103

hFE

1

(1)

(2)

(3)

VCE = 5 V

(1) Tamb = 100 °C

(2) Tamb = 25 °C

(3) Tamb = -40 °C

Fig. 16. PDTC143ZQB-Q: DC current gain as a function

of collector current; typical values

VCE (V)

0

5

4

2

3

1

aaa-018581

0.04

0.06

0.02

0.08

0.1

IC

(A)

0

IB = 0.07 mA

0.14 mA

0.21 mA

0.28 mA

0.35 mA

0.42 mA

0.70 mA

0.49 mA

0.63 mA

0.56 mA

Tamb = 25 °C

Fig. 17. PDTC143ZQB-Q: Collector current as a function

of collector-emitter voltage; typical values

PDTC143X_TO_124XQB-Q_SER

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Nexperia B.V. 2021. All rights reserved

Product data sheet

Rev. 1 — 1 October 2021

9 / 20