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SCM1710ASA Datasheet(PDF) 3 Page - MORNSUN Science& Technology Ltd. |
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SCM1710ASA Datasheet(HTML) 3 Page - MORNSUN Science& Technology Ltd. |
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3 / 13 page ![]() VER.A5 2019.07 Page of 13 3 General test conditions: Free-air, normal operating temperature range (unless otherwise specified). Absolute Maximum Ratings Parameter Symbol Min Max Unit Bias mains voltage VVDD 35 V Voltage of the GATE pin VDRV -0.6 30 V Voltage range UVP,FB,CS,RI -0.6 6 BOS -0.6 30 Storage temperature TSTG -40 150 ℃ Operating junction temperature TJ -40 150 Lead temperature for soldering 0.6mm from case for 10s 260 Rated value of electrostatic discharge (ESD) Human body model (HBM) -2000 2000 V Charging device model (CDM) -1000 1000 Important: Exposure to Absolute Maximum Rated conditions for an extended period may severely affect the device reliability, and stress levels exceeding the “Absolute Maximum Ratings” may result in permanent damage. Recommended Operating Conditions Parameter Symbol Min Max Unit Bias mains voltage VDD 8 25 V VDD bypass capacitance CVDD 0.47 20 uF Maximum operating switching frequency FSW 65 100 kHz Operating junction temperature TJ -40 125 ℃ Electrical Characteristics General test conditions and VDD = 12V, GATE with no load (unless otherwise specified). Symbol Parameter Test condition Mini Typ Max Unit Chip power supply (VDD pin) ISTARTUP VDD starting current VVDD<VVDD off, current flowing into the VDD port 150 300 450 uA IVDD_OP Chip’s operating current VFB=3V, RI=24K 1.5 2.5 3.5 mA VUVLO_ON VDD undervoltage lockout cancellation (enable) VVDD: increasing 14.8 16.1 17.4 V VUVLO_OFF VDD undervoltage lockout VVDD: decreasing 6.8 7.4 8 V VOVP_ON1 VDD overvoltage protection trigger voltage VVDD:15V~21V FB=4V 22.3 24.2 26.2 V VOVP_OFF VDD overvoltage protection recovery voltage VVDD: 21V~10V FB=1-4V 14.8 16.1 17.4 V VOVP_HYS VDD overvoltage protection backlash voltage 8.1 V VCLAMP VDD clamping voltage Sudden improvement of the current absorption capability of VDD 30 35 40 V Feedback voltage input (FB pin) AV_CS PWM input gain △ VFB/△VCS 2.75 V/V VFB_OPEN FB open-circuit voltage 5.37 V IFB_SHORT FB short-circuit current FB grounding current 0.9 1.2 1.5 mA VBURST_ON Frequency modulation mode entry level VFB voltage increasing 1.25 V VBURST_OFF Frequency modulation mode exit level VFB voltage decreasing 1.65 V VTH_PL FB threshold voltage during power limitation 4.55 V Oscillator parameter(RI pin) FOSC Oscillator frequency RI=24K 90.8 KHz DMAX Maximum duty ratio 76 80 84 % AJITTER Frequency jittering amplitude RI=24K 86 90 95 KHz FJITTER Frequency jittering trimming period RI=24K 5 6 8 mS FMIN1 Minimum operating frequency during start RI=24K 23.9 kHz FMIN2 Minimum operating frequency during steady output RI=24K 23.9 kHz RI_RANGE RI change range 15 24 48 KΩ VRI_OPEN RI open-circuit voltage 2 V Current detection input (CS pin) VCST_MAX Internal current limiting 0.8 V TBLANKING Leading edge blanking time, RI=24K External - nS SCOMP1 Slope compensation RI=24K, D∈(40%-60%) 33 mV/uS SCOMP2 Slope compensation RI=24K, 58 mV/uS |
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