5 Specifications

5.1 Electrical Characteristics

(TA = 25°C unless otherwise stated)

PARAMETER

TEST CONDITIONS

MIN

TYP

MAX

UNIT

STATIC CHARACTERISTICS

BVDSS

Drain-to-Source Voltage

VGS = 0 V, IDS = –250 μA

–12

V

IDSS

Drain-to-Source Leakage Current

VGS = 0 V, VDS = –9.6 V

–1

μA

IGSS

Gate-to-Source Leakage Current

VDS = 0 V, VGS = –8 V

–10

μA

VGS(th)

Gate-to-Source Threshold Voltage

VDS = VGS, IDS = 250 μA

–0.5

–0.8

–1.1

V

RDS(on)

Drain-to-Source On-Resistance

VGS = –1.8 V, IDS = –0.1 A

149

199

mΩ

VGS = –2.5 V, IDS = –0.5 A

90

105

mΩ

VGS = –4.5 V, IDS = –0.5 A

66

76

mΩ

gƒs

Transconductance

VDS = –10 V, IDS = –0.5 A

3.4

S

DYNAMIC CHARACTERISTICS

Ciss

Input Capacitance

VGS = 0 V, VDS = –6 V,

ƒ = 1 MHz

180

235

pF

Coss

Output Capacitance

118

154

pF

Crss

Reverse Transfer Capacitance

12.8

16.6

pF

RG

Series Gate Resistance

350

Ω

Qg

Gate Charge Total (–4.5 V)

VDS = –6 V, IDS = –0.5 A

1.04

1.35

nC

Qgd

Gate Charge Gate-to-Drain

0.15

nC

Qgs

Gate Charge Gate-to-Source

0.50

nC

Qg(th)

Gate Charge at Vth

0.18

nC

Qoss

Output Charge

VDS = –6 V, VGS = 0 V

1.08

nC

td(on)

Turn On Delay Time

VDS = –6 V, VGS = –4.5 V,

IDS = –0.5 A,RG = 2 Ω

28

ns

tr

Rise Time

25

ns

td(off)

Turn Off Delay Time

66

ns

tƒ

Fall Time

41

ns

DIODE CHARACTERISTICS

VSD

Diode Forward Voltage

ISD = –0.5 A, VGS = 0 V

–0.75

–1

V

Qrr

Reverse Recovery Charge

VDS= –6 V, IF = –0.5 A, di/dt = 200 A/μs

1.8

nC

trr

Reverse Recovery Time

8.4

ns

5.2 Thermal Information

(TA = 25°C unless otherwise stated)

THERMAL METRIC

TYP

UNIT

RθJA

Junction-to-Ambient Thermal Resistance(1)

85

°C/W

Junction-to-Ambient Thermal Resistance(2)

245

(1)

Device mounted on FR4 material with 1-inch2 (6.45 cm2), 2-oz. (0.071-mm thick) Cu.

(2)

Device mounted on FR4 material with minimum Cu mounting area.

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CSD23382F4

SLPS453E – MAY 2014 – REVISED JANUARY 2022

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