CSD23382F4 12-V P-Channel FemtoFET™ MOSFET

1 Features

• Low on-resistance

• Ultra-low Qg and Qgd

• Ultra-small footprint (0402 case size)

– 1.0 mm × 0.6 mm

• Low profile

– 0.36-mm maximum height

• Integrated ESD protection diode

– Rated > 2-kV HBM

– Rated > 2-kV CDM

• Pb terminal plating

• Halogen free

• RoHS compliant

2 Applications

• Optimized for load switch applications

• Optimized for general purpose switching

applications

• Battery applications

• Handheld and mobile applications

3 Description

This 66-mΩ, 12-V P-channel FemtoFET™ MOSFET

is designed and optimized to minimize the footprint

in many handheld and mobile applications. This

technology is capable of replacing standard small

signal MOSFETs while providing at least a 60%

reduction in footprint size.

.

1.00 mm

0.36 mm

0.60 mm

Typical Device Dimensions

.

.

Product Summary

TA = 25°C

TYPICAL VALUE

UNIT

VDS

Drain-to-source voltage

–12

V

Qg

Gate charge total (–4.5 V)

1.04

nC

Qgd

Gate charge gate-to-drain

0.15

nC

RDS(on)

Drain-to-source on-resistance

VGS = –1.8 V

149

mΩ

VGS = –2.5 V

90

VGS = –4.5 V

66

VGS(th)

Threshold voltage

–0.8

V

Ordering Information(1)

DEVICE

QTY

MEDIA

PACKAGE

SHIP

CSD23382F4

3000

7-inch reel

Femto (0402)

1.0 mm × 0.6 mm

Land Grid Array (LGA)

Tape and

reel

CSD23382F4T

250

7-inch reel

(1)

For all available packages, see the orderable addendum at

the end of the data sheet.

Absolute Maximum Ratings

TA = 25°C

VALUE

UNIT

VDS

Drain-to-source voltage

–12

V

VGS

Gate-to-source voltage

±8

V

ID

Continuous drain current(1)

–3.5

A

IDM

Pulsed drain current, TA = 25°C(2)

–22

A

IG

Continuous gate clamp current

–35

mA

Pulsed gate clamp current(2)

–350

PD

Power dissipation(1)

500

mW

V(ESD)

Human body model (HBM)

2

kV

Charged device model (CDM)

2

kV

TJ,

Tstg

Operating junction and

storage temperature range

–55 to 150

°C

(1)

Typical RθJA = 85°C/W on 1-inch2 (6.45 cm2), 2-oz.

(0.071-mm thick) Cu pad on a 0.06-inch (1.52 mm) thick FR4

PCB.

(2)

Pulse duration ≤ 100 μs, duty cycle ≤ 1%

D

S

G

Top View

CSD23382F4

SLPS453E – MAY 2014 – REVISED JANUARY 2022

An IMPORTANT NOTICE at the end of this data sheet addresses availability, warranty, changes, use in safety-critical applications,

intellectual property matters and other important disclaimers. PRODUCTION DATA.