CSD23382F4.B datasheet(5/14 Pages) TI2

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5.3 Typical MOSFET Characteristics (continued)

(TA = 25°C unless otherwise stated)

0.5

1.5

2.5

3.5

4.5

0.1

0.2

0.3

0.4

0.5

0.6

0.7

0.8

0.9

1.1

Qg - Gate Charge (nC)

G001

ID = –0.5 A

VDS = 6 V

Figure 5-4. Gate Charge

120

150

180

210

240

270

300

− VDS - Drain-to-Source Voltage (V)

Ciss = Cgd + Cgs

Coss = Cds + Cgd

Crss = Cgd

G001

Figure 5-5. Capacitance

0.4

0.5

0.6

0.7

0.8

0.9

1.1

−75

−25

125

175

TC - Case Temperature (ºC)

G001

ID = –250 µA

Figure 5-6. Threshold Voltage vs Temperature

100

120

140

160

180

200

−

VGS - Gate-to- Source Voltage (V)

TC = 25°C, ID = −0.5A

TC = 125°C, ID = −0.5A

G001

Figure 5-7. On-State Resistance vs Gate-to-Source Voltage

0.7

0.8

0.9

1.1

1.2

1.3

1.4

−75

−25

125

175

TC - Case Temperature (ºC)

G001

VGS = –4.5 V

ID = –0.5 A

Figure 5-8. Normalized On-State Resistance vs Temperature

0.0001

0.001

0.01

0.1

0.2

0.4

0.6

0.8

− VSD − Source-to-Drain Voltage (V)

TC = 25°C

TC = 125°C

G001

Figure 5-9. Typical Diode Forward Voltage

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CSD23382F4

SLPS453E – MAY 2014 – REVISED JANUARY 2022

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