STM32WL33C8V datasheet(64/91 Pages) STMICROELECTRONICS

64 / 91 page

6.3.12

Low-speed internal ring oscillator

Table 52. LSI oscillator characteristics

Symbol

Parameter

Conditions

Min.(1)

Typ.(1)

Max.(1)

Unit

fLSI

nominal

LSI frequency

VDD=3.3V

TA = 30 °C

Typical corner

32.83

34.3

35.77

kHz

ΔfLSI /

fLSI(TA) /

TRange

Frequency variation

versus temperature

Standard deviation

140

ppm/ºC

1. Evaluated by characterization - not tested in production

6.3.13

Flash memory characteristics

The characteristics below are specified by design and not tested in production.

Table 53. Flash memory characteristics

Symbol

Parameter

Test conditions

Typ.

Max.

Unit

Tprog

32-bit programming time

µs

Tprog_burst

4x32-bit burst programming

time

4x20

4x40

tERASE

Page (2 kbyte) erase time

tME

Mass erase time

IDD

Average consumption from

VDD

Write mode

Erase mode

Mass erase

Table 54. Flash memory endurance and data retention

Symbol

Parameter

Conditions

Min(1)

Unit

NEND

Endurance

TA= -40 to +105 ºC

kcycles

tRET

Data retention

1 kcycle(2) at TA = 85 °C

Years

1 kcycle(2) at TA = 105 °C

10 kcycles(2) at TA = 55 °C

10 kcycles(2) at TA = 85 °C

10 kcycles(2) at TA = 105 °C

1. Guaranteed by characterization results.

2. Cycling performed over the whole temperature range.

STM32WL33xx

Electrical characteristics

DS14221 - Rev 5

page 64/91

STM32WL33C8V Datasheet(PDF) 64 Page - STMicroelectronics

STM32WL33C8V Datasheet(HTML) 64 Page - STMicroelectronics

Html Pages

1 2 3 4 5 6 7 8 9 10 11 12 13 14 15 16 17 18 19 20 21 22 23 24 25 26 27 28 29 30 31 32 33 34 35 36 37 38 39 40 41 42 43 44 45 46 47 48 49 50 51 52 53 54 55 56 57 58 59 60 61 62 63 64 65 66 67 68 69 70 71 72 73 74 75 76 77 78 79 80 81 82 83 84 85 86 87 88 89 90 91

Datasheet Download

Link URL