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PESDXV4UG Datasheet(PDF) 5 Page - NXP Semiconductors |
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PESDXV4UG Datasheet(HTML) 5 Page - NXP Semiconductors |
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5 / 16 page  PESDXV4UF_G_W_3 © NXP B.V. 2008. All rights reserved. Product data sheet Rev. 03 — 28 January 2008 5 of 16 NXP Semiconductors PESDxV4UF/G/W Very low capacitance quadruple ESD protection diode arrays 6. Characteristics Table 9. Characteristics Tamb =25 °C unless otherwise specified. Symbol Parameter Conditions Min Typ Max Unit Per diode VRWM reverse standoff voltage PESD3V3V4UF PESD3V3V4UG PESD3V3V4UW - - 3.3 V PESD5V0V4UF PESD5V0V4UG PESD5V0V4UW - - 5.0 V IRM reverse leakage current PESD3V3V4UF PESD3V3V4UG PESD3V3V4UW VRWM = 3.3 V - 40 300 nA PESD5V0V4UF PESD5V0V4UG PESD5V0V4UW VRWM = 5.0 V - 3 25 nA VBR breakdown voltage IR =1mA PESD3V3V4UF PESD3V3V4UG PESD3V3V4UW 5.3 5.6 5.9 V PESD5V0V4UF PESD5V0V4UG PESD5V0V4UW 6.4 6.8 7.2 V Cd diode capacitance f=1MHz PESD3V3V4UF PESD3V3V4UG PESD3V3V4UW VR = 0 V - 15 18 pF PESD3V3V4UF PESD3V3V4UG PESD3V3V4UW VR = 3.3 V - 9 12 pF PESD5V0V4UF PESD5V0V4UG PESD5V0V4UW VR = 0 V - 12 15 pF PESD5V0V4UF PESD5V0V4UG PESD5V0V4UW VR = 5 V - 69pF |
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