SPC560D30X datasheet(46/82 Pages) STMICROELECTRONICS

46 / 82 page

Electrical characteristics

SPC560D30x, SPC560D40x

46/82

DS6494 Rev 8

t32Kpperase CC C 32 KB block preprogram and erase time

—

400

600

5000

t128Kpperase CC C 128 KB block preprogram and erase time

—

800

1300

7500

tesus

CC C Erase suspend latency

—

µs

1. Typical program and erase times assume nominal supply values and operation at 25 °C. All times are subject to change

pending device characterization.

2. Initial factory condition: < 100 program/erase cycles, 25 °C, typical supply voltage.

3. The maximum program and erase times occur after the specified number of program/erase cycles. These maximum values

are characterized but not guaranteed.

4. Actual hardware programming times. This does not include software overhead.

Table 27. Program and erase specifications (code flash) (continued)

Symbol

Parameter

Value

Unit

Min

Typ(1)

Initial

max(2)

Max(3)

Table 28. Program and erase specifications (data flash)

Symbol

Parameter

Value

Unit

Min

Typ(1)

Initial

max(2)

Max(3)

tswprogram CC C Single word (32-bits) program time(4)

—

300

µs

t16Kpperase CC C 16 KB block preprogram and erase time

—

700

800

1500

tBank_D

CC C 64 KB block preprogram and erase time

—

1900

2300

4800

1. Typical program and erase times assume nominal supply values and operation at 25 °C. All times are subject to change

pending device characterization.

2. Initial factory condition: < 100 program/erase cycles, 25 °C, typical supply voltage.

3. The maximum program and erase times occur after the specified number of program/erase cycles. These maximum values

are characterized but not guaranteed.

4. Actual hardware programming times. This does not include software overhead.

Table 29. Flash module life

Symbol

Parameter

Conditions

Value

Unit

Min

Typ

Max

P/E

CC C

Number of program/erase

cycles per block over the

operating temperature range

(TJ)

16 KB blocks

100000

—

cycles

32 KB blocks

10000

100000

—

cycles

128 KB blocks

1000

100000

—

cycles

Retention CC C

Minimum data retention at

85 °C average ambient

temperature(1)

Blocks with

0–1000 P/E cycles

—

years

Blocks with

1001–10000 P/E cycles

—

Blocks with

10001–100000 P/E

cycles

5—

—

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