TLV9052IDDFR datasheet(22/87 Pages) TI2

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Table 7-1. TLV905x EMIRR IN+ for Frequencies of Interest

FREQUENCY

APPLICATION OR ALLOCATION

EMIRR IN+

400MHz

Mobile radio, mobile satellite, space operation, weather, radar, ultra-high frequency (UHF)

applications

41.8dB

900MHz

Global system for mobile communications (GSM) applications, radio communication, navigation,

GPS (to 1.6GHz), GSM, aeronautical mobile, UHF applications

53.1dB

1.8GHz

GSM applications, mobile personal communications, broadband, satellite, L-band (1GHz to 2GHz)

71.8dB

2.4GHz

802.11b, 802.11g, 802.11n, Bluetooth®, mobile personal communications, industrial, scientific and

medical (ISM) radio band, amateur radio and satellite, S-band (2GHz to 4GHz)

70.0dB

3.6GHz

Radiolocation, aero communication and navigation, satellite, mobile, S-band

81.2dB

5GHz

802.11a, 802.11n, aero communication and navigation, mobile communication, space and satellite

operation, C-band (4GHz to 8GHz)

92.5dB

7.3.5 Overload Recovery

Overload recovery is defined as the time required for the operational amplifier output to recover from a saturated

state to a linear state. The output devices of the operational amplifier enter a saturation region when the

output voltage exceeds the rated operating voltage, because of the high input voltage or high gain. After the

device enters the saturation region, the output devices require time to return to the linear operating state. After

the output devices return to their linear operating state, the device begins to slew at the specified slew rate.

Therefore, the propagation delay (in case of an overload condition) is the sum of the overload recovery time and

the slew time. The overload recovery time for the TLV905x family is approximately 300 ns.

7.3.6 Packages With an Exposed Thermal Pad

The TLV905x family is available in packages such as the WSON-8 (DSG) and WQFN-16 (RTE) which feature an

exposed thermal pad. Inside the package, the die is attached to this thermal pad using an electrically conductive

compound. For this reason, when using a package with an exposed thermal pad, the thermal pad must either be

connected to V– or left floating. Attaching the thermal pad to a potential other then V– is not allowed, and the

performance of the device is not verified when doing so.

7.3.7 Electrical Overstress

Designers often ask questions about the capability of an operational amplifier to withstand electrical overstress.

These questions tend to focus on the device inputs, but can involve the supply voltage pins or even the output

pin. Each of these different pin functions have electrical stress limits determined by the voltage breakdown

characteristics of the particular semiconductor fabrication process and specific circuits connected to the pin.

Additionally, internal electrostatic discharge (ESD) protection is built into these circuits to protect them from

accidental ESD events both before and during product assembly.

Having a good understanding of this basic ESD circuitry and its relevance to an electrical overstress event

is helpful. Figure 7-2 shows the ESD circuits contained in the TLV905x devices. The ESD protection circuitry

involves several current-steering diodes connected from the input and output pins and routed back to the internal

power supply lines, where they meet at an absorption device internal to the operational amplifier. This protection

circuitry is intended to remain inactive during normal circuit operation.

TLV9051, TLV9052, TLV9054

SBOS942J – AUGUST 2018 – REVISED FEBRUARY 2024

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