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TPS22966

SLVSBH4F – JUNE 2012 – REVISED JULY 2016

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Copyright © 2012–2016, Texas Instruments Incorporated

(1)

Stresses beyond those listed under Absolute Maximum Ratings may cause permanent damage to the device. These are stress ratings

only, which do not imply functional operation of the device at these or any other conditions beyond those indicated under Recommended

Operating Conditions. Exposure to absolute-maximum-rated conditions for extended periods may affect device reliability.

(2)

All voltage values are with respect to network ground terminal.

6 Specifications

6.1 Absolute Maximum Ratings

Over operating free-air temperature range (unless otherwise noted)

(1)

MIN

MAX

UNIT(2)

VIN1,2

Input voltage

–0.3

6

V

VOUT1,2

Output voltage

–0.3

6

V

VON1,2

ON-pin voltage

–0.3

6

V

VBIAS

VBIAS voltage

–0.3

6

V

IMAX

Maximum continuous switch current per channel

6

A

IPLS

Maximum pulsed switch current per channel, pulse <300 µs, 2% duty cycle

8

A

TJ

Maximum junction temperature

125

°C

TLEAD

Maximum lead temperature (10-s soldering time)

300

°C

Tstg

Storage temperature

–65

150

°C

(1)

JEDEC document JEP155 states that 500-V HBM allows safe manufacturing with a standard ESD control process.

(2)

JEDEC document JEP157 states that 250-V CDM allows safe manufacturing with a standard ESD control process.

6.2 ESD Ratings

VALUE

UNIT

V(ESD)

Electrostatic discharge

Human body model (HBM), per ANSI/ESDA/JEDEC JS-001(1)

±2000

V

Charged-device model (CDM), per JEDEC specification JESD22-C101(2)

±1000

(1)

See the Input Capacitor (Optional) section.

(2)

In applications where high power dissipation and/or poor package thermal resistance is present, the maximum ambient temperature may

have to be derated. Maximum ambient temperature [TA(max)] is dependent on the maximum operating junction temperature [TJ(max)], the

maximum power dissipation of the device in the application [PD(max)], and the junction-to-ambient thermal resistance of the part-package

in the application (θJA), as given by the following equation: TA(max) = TJ(max) – (θJA × PD(max)).

6.3 Recommended Operating Conditions

MIN

MAX

UNIT

VIN1,2

Input voltage

0.8

VBIAS

V

VBIAS

Bias voltage

2.5

5.5

V

VON1,2

ON voltage

0

5.5

V

VOUT1,2

Output voltage

VIN

V

VIH

High-level input voltage, ON

VBIAS = 2.5 V to 5.5 V

1.2

5.5

V

VIL

Low-level input voltage, ON

VBIAS = 2.5 V to 5.5 V

0

0.5

V

CIN1,2

Input capacitor

1(1)

µF

TA

Operating free-air temperature (2)

–40

105

°C

(1)

For more information about traditional and new thermal metrics, see the Semiconductor and IC Package Thermal Metrics application

report.

6.4 Thermal Information

THERMAL METRIC (1)

TPS22966

UNIT

DPU (WSON)

14 PINS

RθJA

Junction-to-ambient thermal resistance

52.3

°C/W

RθJC(top)

Junction-to-case (top) thermal resistance

45.9

°C/W

RθJB

Junction-to-board thermal resistance

11.5

°C/W

ψJT

Junction-to-top characterization parameter

0.8

°C/W