MP5611

– 2.9V TO 5.2V INPUT, TRIPLE-OUTPUT, AMOLED POWER SUPPLY

MP5611 Rev. 1.0

MonolithicPower.com

4

12/16/2021

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ELECTRICAL CHARACTERISTICS

VIN = 3.7V, VELVDD/ELVSS/AVDD = default, TA = -40°C to +85°C, unless otherwise noted.

Parameter

Symbol

Condition

Min

Typ

Max

Units

General

Operating input voltage

VIN

2.9

5.2

V

Shutdown current

ISD

EN_AVDD = CTRL = 0V

0.1

μA

Quiescent supply current

IQ

VIN = 3.7V, ELVDD switching

1.6

3

mA

Input under-voltage

lockout (UVLO) threshold

VIN_UVLO

Rising edge

2.65

V

Input UVLO hysteresis

300

mV

EN_AVDD/FD high

voltage

VEN_HIGH

Rising VEN

1.35

V

EN_AVDD/FD low voltage

VEN_LOW

Falling VEN

0.4

V

EN_AVDD pull-down

resister

RDOWN

500

k

Ω

Over-temperature

protection (OTP)

threshold (5)

TSD

150

°C

Thermal protection

hysteresis (5)

25

°C

Boost Converter ELVDD

ELVDD voltage

VELVDD

4.6

V

ELVDD voltage variation

TA = 25°C, no load

-0.5

+0.5

%

-40°C to +85°C, no load

-0.8

+0.8

%

Low-side MOSFET

(LS-FET) on resistance

RON_LS_ELVDD

ISW1 = 200mA

160

m

Ω

High-side MOSFET

(HS-FET) on resistance

RON_HS_ELVDD

ISW1 = 200mA

320

m

Ω

Switching frequency

fSW1

1.35

MHz

Current limit

ILIMIT1

1.5

A

Output over-current

protection (OCP)

threshold

IOCP_ELVDD

IOCP_ELVDD = 650mA

650

mA

Short protection threshold

During operation

80

%

Short protection detection

time

During operation

1

ms

ELVDD sense threshold

VTELVDD

Increasing ELVDD-FB

350

mV

Feedback (FB) sense

threshold

VTFB

Decreasing ELVDD-FB

250

mV

ELVDD/FB leakage

current

ILEAKAGE

CTRL = FD = 0V

5

μA

FB pull-down resister

RDOWN_FB

4

M

Ω

Active discharge

resistance

RDS_ELVDD

CTRL = 0V, IELVDD = 1mA

75

Ω

Load regulation (5)

1mA < IELVDD < 300mA

0.2

%/A

Line regulation (5)

2.9V < VIN < 4.3V, IELVDD = 200mA

0.015

%/V

2.9V < VIN < 5.2V, IELVDD = 200mA

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