KSC5026MOS datasheet(3/7 Pages) ONSEMI

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KSC5026M Rev. B3

Electrical Characteristics T

A = 25°C unless otherwise noted

hFE Classification

Symbol

Parameter

Test Condition

Min.

Typ.

Max.

Units

BVCBO

Collector-Base Breakdown Voltage

IC = 1mA, IE = 0

1100

BVCEO

Collector-Emitter Breakdown Voltage IC = 5mA, IB = 0

800

BVEBO

Emitter-Base Breakdown Voltage

IE = 1mA, IC = 0

VCEX(sus)

Collector-Emitter Sustaining Voltage

IC = 0.75A,

IB1 = -IB2 = 0.15A,

L = 5mH, Clamped

800

ICBO

Collector Cut-off Current

VCB = 800V, IE = 0

μA

IEBO

Emitter Cut-off Current

VEB = 5V, IC = 0

μA

hFE1

hFE2

DC Current Gain

VCE = 5V, IC = 0.1A

VCE = 5V, IC = 0.5A

VCE(sat)

Collector-Emitter Saturation Voltage

IC = 0.75A, IB = 0.15A

VBE(sat)

Base-Emitter Saturation Voltage

IC = 0.75A, IB = 0.15A

1.5

Cob

Output Capacitance

VCB = 10V, IE = 0, f = 1MHz

Current Gain Bandwidth Product

VCE = 10V, IC = 0.1A

MHz

tON

Turn On Time

VCC = 400V

IC = 5IB1 = -2.5IB2 = 1A

RL = 400Ω

0.5

μs

tSTG

Storage Time

μs

Fall Time

0.3

μs

Classification

hFE1

10 ~ 20

15 ~ 30

20 ~ 40

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