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AT25DF021A-DWFHT Datasheet(PDF) 47 Page - Renesas Technology Corp

Part # AT25DF021A-DWFHT
Description  2-Mbit, 1.65 V Minimum SPI Serial Flash Memory with Dual-I/O Support
PDF  59 Pages
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Manufacturer  RENESAS [Renesas Technology Corp]
Direct Link  http://www.renesas.com
Logo RENESAS - Renesas Technology Corp

AT25DF021A-DWFHT Datasheet(HTML) 47 Page - Renesas Technology Corp

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DS-AT25DF021A-042 Rev. L
Page 47
8/7/23
© 2023 Renesas Electronics
AT25DF021A Datasheet
13.8 Program and Erase Characteristics (-40°C to +85°C)
Symbol
Parameter
1.65V-3.6V
2.3V-3.6V
Min
Typ
Max
Min
Typ
Max
Units
tPP[1]
1. Maximum values indicate worst-case performance after 100,000 erase/program cycles.
Page Program Time (256 Bytes)
1.25
2.5
1.25
2.5
ms
tBP
Byte Program Time
8
8
µs
tPE
Page Erase Time (256 Bytes)
6
20
6
15
ms
tBLKE[1]
Block Erase Time
4 kBytes
40
60
40
50
ms
32 kBytes
250
500
250
400
64 kBytes
500
1000
500
800
tCHPE[1][2]
2. Not 100% tested (value guaranteed by design and characterization).
Chip Erase Time
2.0
4
2.0
3.2
sec
tOTPP[1]
OTP Security Register Program Time
400
950
400
950
µs
tWRSR
Write Status Register Time
200
200
ns
13.9 Program and Erase Characteristics (-40°C to +125°C)
Symbol
Parameter
1.7 V-3.6V
2.3V-3.6V
Min
Typ
Max
Min
Typ
Max
Units
tPP[1]
1. Maximum values indicate worst-case performance after 20,000 erase/program cycles.
Page Program Time (256 Bytes)
2
6
2
5
ms
tBP
Byte Program Time
12
12
µs
tPE
Page Erase Time (256 Bytes)
6
20
6
20
ms
tBLKE[1]
Block Erase Time
4 kBytes
45
100
45
100
ms
32 kBytes
300
700
300
700
64 kBytes
500
1400
500
1400
tCHPE[1][2]
2. Not 100% tested (value guaranteed by design and characterization).
Chip Erase Time
2.5
6
2.5
6
s
tOTPP[1]
OTP Security Register Program Time
400
950
400
950
µs
tWRSR
Write Status Register Time
200
200
ns



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