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PDR09C6B Datasheet(PDF) 4 Page - Potens Semiconductor Corp. |
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PDR09C6B Datasheet(HTML) 4 Page - Potens Semiconductor Corp. |
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4 / 5 page ![]() Potens semiconductor corp. Ver.1.00 4 PDR09C6B 100V N-Channel MOSFETs Fig.10 Maximum Safe Operation Area Fig.11 Switching Time Waveform Fig.12 EAS Waveform Fig.8 Gate Charge Characteristics IAS VGS BVDSS VDD EAS= 1 2 L x IAS 2 x BVDSS BVDSS-VDD Td(on) Tr Ton Td(off) Tf Toff VDS VGS 90% 10% 0.01 0.1 1 0.00001 0.0001 0.001 0.01 0.1 1 NOTES: DUTY FACTOR: D = t1/t2 SINGLE PULSE 0.5 0.2 0.1 0.05 0.02 0.01 0 2 4 6 8 10 0 3 6 9 12 15 ID=20A VDS=50V 1.0 10.0 100.0 1000.0 0.1 1 10 100 Ciss Coss Crss 0.01 0.1 1 10 100 0.1 1 10 100 TC=25℃ DC 100ms 10ms 100us 10us 1ms VDS , Drain to Source Voltage (V) Qg , Gate Charge (nC) Fig.9 Normalized Transient Impedance Square Wave Pulse Duration (s) VDS , Drain to Source Voltage (V) Fig.7 Capacitance Characteristics |
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