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PDR09C6B Datasheet(PDF) 3 Page - Potens Semiconductor Corp. |
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PDR09C6B Datasheet(HTML) 3 Page - Potens Semiconductor Corp. |
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3 / 5 page ![]() Potens semiconductor corp. Ver.1.00 3 PDR09C6B 100V N-Channel MOSFETs 0.4 0.6 0.8 1 1.2 1.4 -50 0 50 100 150 0 0.5 1 1.5 2 2.5 -50 0 50 100 150 0 8 16 24 32 40 25 50 75 100 125 150 0 6 12 18 24 30 0 1 2 3 4 5 VGS=2.3V VGS=2.5V VGS=3V VGS=4.5V 12 13 14 16 17 18 5 10 15 20 25 30 Tc=25℃ VGS=6V VGS=10V 10 14 18 22 26 30 0 2 4 6 8 10 Tc=25℃ ID=10A ID=30A Fig.1 Typical Output Characteristics TC , Case Temperature (℃) Fig.2 Continuous Drain Current vs. TC TJ , Junction Temperature (℃) Fig.3 Normalized RDSON vs. TJ TJ , Junction Temperature (℃) Fig.4 Normalized Vth vs. TJ Fig.5 Turn-On Resistance vs. VGS Fig.6 Turn-On Resistance vs. ID VDS ,Drain to Source Voltage (V) VGS , Gate to Source Voltage (V) ID , Drain Current (A) |
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