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PDR09C6B Datasheet(PDF) 1 Page - Potens Semiconductor Corp. |
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PDR09C6B Datasheet(HTML) 1 Page - Potens Semiconductor Corp. |
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1 / 5 page  Potens semiconductor corp. Ver.1.00 1 PDR09C6B 100V N-Channel MOSFETs Symbol Parameter Rating Units VDS Drain-Source Voltage 100 V VGS Gate-Source Voltage ±20 V ID Drain Current – Continuous (TC=25℃) 38 A Drain Current – Continuous (TC=100℃) 24 A IDM Drain Current – Pulsed1 152 A EAS Single Pulse Avalanche Energy2 72 mJ IAS Single Pulse Avalanche Current2 38 A PD Power Dissipation (TC=25℃) 62 W Power Dissipation – Derate above 25℃ 0.49 W/℃ TSTG Storage Temperature Range -55 to 150 ℃ TJ Operating Junction Temperature Range -55 to 150 ℃ BVDSS RDSON ID 100V 17m 38A Symbol Parameter Typ. Max. Unit RθJA Thermal Resistance Junction to ambient --- 62 ℃/W RθJC Thermal Resistance Junction to Case --- 2.01 ℃/W These N-Channel enhancement mode power field effect transistors are using trench DMOS technology. This advanced technology has been especially tailored to minimize on-state resistance, provide superior switching performance, and withstand high energy pulse in the avalanche and commutation mode. These devices are well suited for high efficiency fast switching applications. 100V,38A, RDS(ON) =17m Ω@VGS = 10V Improved dv/dt capability Fast switching 100% EAS Guaranteed Green Device Available General Description Features Absolute Maximum Ratings Tc=25℃ unless otherwise noted Thermal Characteristics Applications TO251 Pin Configuration Networking Load Switch LED applications Quick Charger D G S S D G D |
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