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AP10G04DF Datasheet(PDF) 6 Page - A POWER MICROELECTRONICS

Part # AP10G04DF
Description  40V NP-Channel Enhancement Mode MOSFET
PDF  9 Pages
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Manufacturer  APME [A POWER MICROELECTRONICS]
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Logo APME - A POWER MICROELECTRONICS

AP10G04DF Datasheet(HTML) 6 Page - A POWER MICROELECTRONICS

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AP10G04DF
40V N+P-Channel Enhancement Mode MOSFET
AP10G04DF RVE1.0
臺灣永源微電子科技有限公司
Typical Characteristics
0
2
4
6
8
10
12
0
0.5
1
1.5
2
-VDS Drain-to-Source Voltage (V)
VGS=-10V
VGS=-7V
VGS=-5V
VGS=-4.5V
VGS=-3V
30
35
40
45
50
55
60
2
4
6
8
10
-VGS (V)
ID=-12A
0
2
4
6
8
10
12
0.2
0.4
0.6
0.8
1
-VSD , Source-to-Drain Voltage (V)
TJ=150℃
TJ=25℃
0
2
4
6
8
10
0
6
12
18
QG , Total Gate Charge (nC)
VDS=-20V
ID=-12A
0
0.5
1
1.5
-50
0
50
100
150
TJ ,Junction Temperature ( ℃)
0.5
1.0
1.5
2.0
-50
0
50
100
150
TJ , Junction Temperature (℃)
Fig.1 Typical Output Characteristics
Fig.2 On-Resistance v.s Gate-Source
Voltage
Fig.3 Forward Characteristics of Reverse
diode
Fig.4 Gate-Charge Characteristics
Fig.5 Normalized VGS(th) v.s TJ
Fig.6 Normalized RDSON v.s TJ
P-



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