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DMNH10H021SPSW Datasheet(PDF) 4 Page - Diodes Incorporated

Part # DMNH10H021SPSW
Description  100V 175°C N-CHANNEL ENHANCEMENT MODE MOSFET PowerDI5060-8
PDF  7 Pages
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Manufacturer  DIODES [Diodes Incorporated]
Direct Link  http://www.diodes.com
Logo DIODES - Diodes Incorporated

DMNH10H021SPSW Datasheet(HTML) 4 Page - Diodes Incorporated

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DMNH10H021SPSW
Document number: DS42852 Rev. 2 - 2
4 of 7
www.diodes.com
January 2021
© Diodes Incorporated
DMNH10H021SPSW
0
0.005
0.01
0.015
0.02
0.025
0.03
0.035
0.04
-50
-25
0
25
50
75
100 125 150 175
T
J, JUNCTION TEMPERATURE (℃)
Figure 7. On-Resistance Variation with Junction
Temperature
0
0.5
1
1.5
2
2.5
3
3.5
4
-50 -25
0
25
50
75
100 125 150 175
TJ, JUNCTION TEMPERATURE (℃)
Figure 8. Gate Threshold Variation vs Junction
Temperature
0
5
10
15
20
25
30
0
0.3
0.6
0.9
1.2
1.5
V
SD, SOURCE-DRAIN VOLTAGE (V)
Figure 9. Diode Forward Voltage vs. Current
10
100
1000
10000
0
10
20
30
40
50
60
70
80
90 100
V
DS, DRAIN-SOURCE VOLTAGE (V)
Figure 10. Typical Junction Capacitance
f = 1MHz
0
2
4
6
8
10
0
20
40
60
80
Q
g (nC)
Figure 11. Gate Charge
0.01
0.1
1
10
100
1000
1
10
100
1000
V
DS, DRAIN-SOURCE VOLTAGE (V)
Figure 12. SOA, Safe Operation Area
T
J(MAX) = 175
oC
T
C = 25
oC
Single Pulse
DUT on Infinite
Heatsink
V
GS = 10V
R
DS(ON)
Limited
I
D
= 250
μA
V
GS
= 10V, ID = 20A
I
D
= 1mA
T
J
= 125oC
T
J
= -55oC
T
J
= 25oC
T
J
= 85oC
T
J
= 150oC
T
J
= 175oC
Ciss
Coss
Crss
VDS = 50V, ID = 3.3A
PW = 1μs
PW = 10μs
PW = 100μs
PW = 1ms
PW = 10ms
PW = 100ms
PW = 1s



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