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DMNH10H021SPSW Datasheet(PDF) 3 Page - Diodes Incorporated

Part # DMNH10H021SPSW
Description  100V 175°C N-CHANNEL ENHANCEMENT MODE MOSFET PowerDI5060-8
PDF  7 Pages
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Manufacturer  DIODES [Diodes Incorporated]
Direct Link  http://www.diodes.com
Logo DIODES - Diodes Incorporated

DMNH10H021SPSW Datasheet(HTML) 3 Page - Diodes Incorporated

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DMNH10H021SPSW
Document number: DS42852 Rev. 2 - 2
3 of 7
www.diodes.com
January 2021
© Diodes Incorporated
DMNH10H021SPSW
0
5
10
15
20
25
30
0
0.5
1
1.5
2
2.5
3
V
DS, DRAIN-SOURCE VOLTAGE (V)
Figure 1. Typical Output Characteristic
0
5
10
15
20
25
30
1
2
3
4
5
6
V
GS, GATE-SOURCE VOLTAGE (V)
Figure 2. Typical Transfer Characteristic
V
DS = 5V
0.014
0.016
0.018
0.02
0.022
0.024
0
5
10
15
20
25
30
I
D, DRAIN-SOURCE CURRENT (A)
Figure 3. Typical On-Resistance vs. Drain Current
and Gate Voltage
0
0.01
0.02
0.03
0.04
0.05
0.06
0.07
0.08
0.09
0.1
0
2
4
6
8
10
12
14
16
18
20
V
GS, GATE-SOURCE VOLTAGE (V)
Figure 4. Typical Transfer Characteristic
0
0.01
0.02
0.03
0.04
0.05
0
5
10
15
20
25
30
I
D, DRAIN CURRENT (A)
Figure 5. Typical On-Resistance vs Drain Current
and Junction Temperature
V
GS = 10V
0.4
0.6
0.8
1
1.2
1.4
1.6
1.8
2
2.2
2.4
2.6
-50
-25
0
25
50
75
100 125 150 175
T
J, JUNCTION TEMPERATURE (℃)
Figure 6. On-Resistance Variation with Junction
Temperature
V
GS
= 5.0V
V
GS
= 3.5V
V
GS
= 3.8V
V
GS
= 4.0V
V
GS
= 4.5V
V
GS
= 10.0V
T
J
= -55oC
T
J
= 25oC
T
J
= 85oC
T
J
= 125oC
T
J
= 150oC
T
J
= 175oC
V
GS
= 10V
I
D
= 20A
T
J
= -55oC
T
J
= 25oC
T
J
= 85oC
T
J
= 125oC
T
J
= 125oC
T
J
= 175oC
V
GS
= 10V, ID = 20A



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