DMNH10H021SPSW

Document number: DS42852 Rev. 2 - 2

2 of 7

www.diodes.com

January 2021

© Diodes Incorporated

DMNH10H021SPSW

Maximum Ratings (@TA = +25°C, unless otherwise specified.)

Characteristic

Symbol

Value

Unit

Drain-Source Voltage

VDSS

100

V

Gate-Source Voltage

VGSS

±20

V

Continuous Drain Current (Note 7) VGS = 10V

Steady

State

TC = +25°C

TC = +100°C

ID

58

41

A

Pulsed Drain Current (10

μs Pulse, Duty Cycle = 1%)

IDM

232

A

Maximum Continuous Body Diode Forward Current (Note 7)

IS

58

A

Pulsed Source Current (10µs Pulse, Duty Cycle = 1%)

ISM

232

A

Avalanche Current, L = 0.1mH

IAS

56

A

Avalanche Energy, L = 0.1mH

EAS

157

mJ

Thermal Characteristics

Characteristic

Symbol

Value

Unit

Total Power Dissipation (Note 5)

PD

1.8

W

Thermal Resistance, Junction to Ambient (Note 5)

Steady State

RJA

80

°C/W

Total Power Dissipation (Note 6)

PD

4.4

W

Thermal Resistance, Junction to Ambient (Note 6)

Steady State

RJA

34

°C/W

Thermal Resistance, Junction to Case (Note 7)

RJC

1.05

Operating and Storage Temperature Range

TJ, TSTG

-55 to +175

°C

Electrical Characteristics (@TA = +25°C, unless otherwise specified.)

Characteristic

Symbol

Min

Typ

Max

Unit

Test Condition

OFF CHARACTERISTICS (Note 8)

Drain-Source Breakdown Voltage

BVDSS

100

—

—

V

VGS = 0V, ID = 250µA

Zero Gate Voltage Drain Current

IDSS

—

—

1.0

µA

VDS = 100V, VGS = 0V

Gate-Source Leakage

IGSS

—

—

±100

nA

VGS = ±20V, VDS = 0V

ON CHARACTERISTICS (Note 8)

Gate Threshold Voltage

VGS(TH)

2.0

—

4.0

V

VDS = VGS, ID = 250µA

Static Drain-Source On-Resistance

RDS(ON)

—

16

28

m

Ω

VGS = 10V, ID = 20A

Diode Forward Voltage

VSD

—

0.7

1.2

V

VGS = 0V, IS = 1.0A

DYNAMIC CHARACTERISTICS (Note 9)

Input Capacitance

Ciss

—

3789

—

pF

VDS = 50V, VGS = 0V

f = 1.0MHz

Output Capacitance

Coss

—

223

—

Reverse Transfer Capacitance

Crss

—

91

—

Gate Resistance

RG

—

0.95

—

Ω

VDS = 0V, VGS = 0V, f = 1.0MHz

Total Gate Charge

Qg

—

71

—

nC



VGS = 10V, VDD = 50V, ID = 3.3A

Gate-Source Charge

Qgs

—

13

—

Gate-Drain Charge

Qgd

—

18

—

Turn-On Delay Time

tD(ON)

—

17

—

ns

VGS = 10V, VDS = 50V,

RG = 6.0Ω, ID = 3.3A

Turn-On Rise Time

tR

—

10

—

Turn-Off Delay Time

tD(OFF)

—

65

—

Turn-Off Fall Time

tF

—

24

—

Reverse Recovery Time

tRR

—

46

—

ns

IF = 3.3A, di/dt = 100A/µs

Reverse Recovery Charge

QRR

—

73

—

nC

IF = 3.3A, di/dt = 100A/µs

Notes:

5. Device mounted on FR-4 substrate PC board, 2oz copper, with minimum recommended pad layout.

6. Device mounted on FR-4 substrate PC board, 2oz copper, with 1inch square copper plate.

7. Thermal resistance from junction to soldering point (on the exposed drain pad).

8. Short duration pulse test used to minimize self-heating effect.

9. Guaranteed by design. Not subject to product testing.