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DMP6018LPSQ Datasheet(PDF) 4 Page - Diodes Incorporated

Part # DMP6018LPSQ
Description  60V P-CHANNEL ENHANCEMENT MODE MOSFET PowerDI5060-8
PDF  9 Pages
Scroll/Zoom Zoom In 100%  Zoom Out
Manufacturer  DIODES [Diodes Incorporated]
Direct Link  http://www.diodes.com
Logo DIODES - Diodes Incorporated

DMP6018LPSQ Datasheet(HTML) 4 Page - Diodes Incorporated

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DMP6018LPSQ
Document number: DS42662 Rev. 3 - 2
4 of 9
www.diodes.com
October 2020
© Diodes Incorporated
DMP6018LPSQ
0
0.02
0.04
0.06
0.08
0.1
2
4
6
8
10
12
14
16
18
20
VGS, GATE-SOURCE VOLTAGE (V)
Figure 4. Typical Transfer Characteristic
I
D = -17A
I
D = -5A
0
0.005
0.01
0.015
0.02
0.025
0.03
0
5
10
15
20
25
30
ID, DRAIN CURRENT (A)
Figure 5. Typical On-Resistance vs. Drain Current and
Temperature
TJ = -55℃
TJ = 25℃
TJ = 85℃
TJ = 150℃
TJ = 125℃
V
GS = -10V
0.4
0.6
0.8
1
1.2
1.4
1.6
1.8
2
-50
-25
0
25
50
75
100
125
150
TJ, JUNCTION TEMPERATURE (℃)
Figure 6. On-Resistance Variation with Temperature
V
GS = -10V, ID = -17A
V
GS = -4.5V, ID = -5A
0
5
10
15
20
25
30
0
1
2
3
4
5
6
VGS, GATE-SOURCE VOLTAGE (V)
Figure 2. Typical Transfer Characteristic
V
DS = -5V
TJ = -55℃
TJ = 25℃
TJ = 85℃
TJ = 125℃
TJ = 150℃
0
5
10
15
20
25
30
35
40
45
50
0
0.5
1
1.5
2
2.5
3
3.5
4
4.5
5
V
DS, DRAIN-SOURCE VOLTAGE (V)
Figure 1. Typical Output Characteristic
V
GS = -3.2V
V
GS = -3.5V
V
GS = -4.0V
V
GS = -10.0V
V
GS = -3.7V
V
GS = -4.5V
V
GS = -5.0V
0.000
0.005
0.010
0.015
0.020
0.025
0.030
0.035
0.040
0.045
0.050
0
5
10
15
20
25
30
I
D, DRAIN-SOURCE CURRENT (A)
Figure 3. Typical On-Resistance vs. Drain Current and
Gate Voltage
V
GS = -10V
V
GS = -4.5V



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