UPC835

R03DS0186EJ0100 Rev.1.00

Page 3 of 8

Mar.10.25

ELECTRICAL CHARACTERISTICS (TA = 25 °C, V± = ±15 V, unless otherwise specified)

Parameter

Symbol

MIN.

TYP.

MAX.

Unit

Test Condition

Input Offset Voltage

VIO

±1.5

±3

mV

RS ≤ 50 Ω

Input Offset Current

IIO

±25

±100

pA

Input Bias Current Note7

IB

50

200

pA

Large Signal Voltage Gain

AV

25000

200000

RL ≥ 2 kΩ, VO = ±10 V

Circuit Current Note8

ICC

1.4

2.2

mA

IO = 0 A

Common Mode Rejection Ratio

CMR

70

80

dB

Supply Voltage Rejection Ratio

SVR

70

85

dB

Output Voltage Swing

Vom

±12

+14.0

-13.3

V

RL ≥ 10 kΩ

Output Voltage Swing

Vom

±10

+13.5

-12.8

V

RL ≥ 2 kΩ

Common Model Input Voltage

Range

VICM

+11.7

-11.0

+15

-12

V

Slew Rate

SR

5.5

V/μs

AV = 1

Unity Gain Frequency

funity

2.8

MHz

Input Equivalent Noise Voltage

Density

en

25

nV/ Hz

RS = 100 Ω, f = 1 kHz

Channel Separation

120

dB

Average VIO Temperature Drift

Δ

VIO/ΔT

±7

μV/°C

TA = -20 ~ +70 °C

【

Note】7. Input bias currents flow into IC, because each currents are base current to Pch J-FET on input stage.When TJ

= 25°C or more, this figure exponentially grows along with a rise of temperature.

8. This current flows irrespective of the existence of use.

Caution Special attention is required for insulation between pins on a board, since the UPC835 has a high-input

impedance characteristic..