RA4M3 datasheet(27/98 Pages) RENESAS

27 / 98 page

2.2.4

I/O VOH, VOL, and Other Characteristics

Table 2.6

I/O VOH, VOL, and other characteristics

Parameter

Symbol Min

Typ Max Unit Test conditions

Output voltage

IIC

VOL

—

0.4

IOL = 3.0 mA

VOL

—

0.6

IOL = 6.0 mA

IIC*1

VOL

—

0.4

IOL = 15.0 mA (ICFER.FMPE = 1)

VOL

—

0.4 —

IOL = 20.0 mA (ICFER.FMPE = 1)

Ports P205, P206, P407 to

P415, P708 to P713 (total of 17

pins)*2

VOH

VCC – 1.0 —

—

IOH = –20 mA

VCC = 3.3 V

VOL

—

1.0

IOL = 20 mA

VCC = 3.3 V

Other output pins

VOH

VCC – 0.5 —

—

IOH = –1.0 mA

VOL

—

0.5

IOL = 1.0 mA

Input leakage current

RES

|Iin|

—

5.0

µA

Vin = 0 V

Vin = 5.5 V

Port P200

—

1.0

Vin = 0 V

Vin = VCC

Three-state leakage current

(off state)

5 V-tolerant ports

|ITSI|

—

5.0

µA

Vin = 0 V

Vin = 5.5 V

Other ports (except for port

P200)

—

1.0

Vin = 0 V

Vin = VCC

Input pull-up MOS current

Ports P0 to P8

–300

—

–10 µA

VCC = 2.7 to 3.6 V

Vin = 0 V

Input capacitance

Ports P014, P015

Cin

—

Vbias = 0 V

Vamp = 20 mV

f = 1 MHz

Ta = 25°C

USB_DP and USB_DM

—

Ports P400, P401, P511, P512

—

Other input pins

—

Note 1. SCL0_A, SDA0_A (total 2 pins).

Note 2. This is the value when high driving ability is selected in the Port Drive Capability bit in the PmnPFS register.

The selected driving ability is retained in Deep Software Standby mode.

RA4M3 Datasheet

2. Electrical Characteristics

R01DS0368EJ0150 Rev.1.50

Apr 25, 2025

Page 27 of 98

RA4M3 Datasheet(PDF) 27 Page - Renesas Technology Corp

RA4M3 Datasheet(HTML) 27 Page - Renesas Technology Corp

Html Pages

1 2 3 4 5 6 7 8 9 10 11 12 13 14 15 16 17 18 19 20 21 22 23 24 25 26 27 28 29 30 31 32 33 34 35 36 37 38 39 40 41 42 43 44 45 46 47 48 49 50 51 52 53 54 55 56 57 58 59 60 61 62 63 64 65 66 67 68 69 70 71 72 73 74 75 76 77 78 79 80 81 82 83 84 85 86 87 88 89 90 91 92 93 94 95 96 97 98

Datasheet Download

Link URL