RZSLASHG2M datasheet(59/169 Pages) RENESAS

59 / 169 page

RZ/G Series, 2nd Generation Datasheet

Section 3. Electrical Characteristics

R01DS0483EJ0101 Rev.1.01

Page 59 of 169

Jun 30, 2025

Table 3.4.7

DC Characteristics (2.5-V I/O [AVB])

Item

Symbol

Min.

Typ.

Max.

Unit

Measurement

conditions

Remarks

Input high voltage

VIH

1.7

—

VDDQ25_ETH+

0.3

VDDQ25_ETH =

2.4 to 2.6V

―

Input low voltage

VIL

-0.3

—

0.7

Output high voltage

VOH

2.0

—

VDDQ25_ETH =

2.4 to 2.6V

IOH= -1 mA

Output low voltage

VOL

—

0.4

IOL = 1 mA

Pin capacitance

—

―

Input leakage

current high

ILIH

—

μA

VDDQ25_ETH =

2.6 V, Vin = 2.5

V *1

―

Input leakage

current low

ILIL

-15

—

μA

VDDQ25_ETH =

2.6 V, Vin = 0.4

V *1

―

Output leakage

current high

ILOH *1

—

μA

—

Hi-Z output*1

Output leakage

current low

ILOL *1

-10

—

μA

—

Hi-Z output*1

Pull-up current

IPU

—

μA

VDDQ25_ETH =

2.4 to 2.6 V

Vin = VSS

Pull-down current

IPD

—

μA

—

Vin = 2.4 to

2.6 V

Note: *1 Without pull-up or pull-down resistor.

RZ/G2H

RZ/G2M V1.3

RZ/G2N

RZ/G2E

RZ/G2M V3.0

RZ/G2M Datasheet(PDF) 59 Page - Renesas Technology Corp

RZ/G2M Datasheet(HTML) 59 Page - Renesas Technology Corp

Html Pages

1 2 3 4 5 6 7 8 9 10 11 12 13 14 15 16 17 18 19 20 21 22 23 24 25 26 27 28 29 30 31 32 33 34 35 36 37 38 39 40 41 42 43 44 45 46 47 48 49 50 51 52 53 54 55 56 57 58 59 60 61 62 63 64 65 66 67 68 69 70 71 72 73 74 75 76 77 78 79 80 81 82 83 84 85 86 87 88 89 90 91 92 93 94 95 96 97 98 99 100 ...More

Datasheet Download

Link URL