RZSLASHG2N datasheet(63/169 Pages) RENESAS

63 / 169 page

RZ/G Series, 2nd Generation Datasheet

Section 3. Electrical Characteristics

R01DS0483EJ0101 Rev.1.01

Page 63 of 169

Jun 30, 2025

Table 3.4.11 DC Characteristics (1.8-V I/O)

Item

Symbol

Min.

Typ.

Max.

Unit

Measurement

conditions

Remarks

Schmitt input high

voltage

VT+

—

VDDQ18 ×

0.7

VDDQ18 =

1.7 to 1.9 V

PRESET#,

BSMODE,

NMI pins

Schmitt input low

voltage

VT-

VDDQ18 ×

0.3

—

Input high voltage

VIH

VDDQ18 ×

0.8

—

VDDQ18 +

0.3

—

EXTAL,

USB_EXTAL

pins

Input low voltage

VIL

-0.3

—

VDDQ18 ×

0.2

Input high voltage

(1.8-V LVCMOS)

VIH

0.65 ×

VDDQ18

—

VDDQ18 +

0.3

VDDQ18 =

1.7 to 1.9 V

Other pins

Input low voltage

(1.8-V LVCMOS)

VIL

-0.3

—

0.35 ×

VDDQ18

Output high voltage

VOH

0.7 ×

VDDQ18

—

VDDQ18 =

1.7 to 1.9 V

IOH = - 4 mA

Output low voltage

VOL

—

0.4

IOL = 4 mA

Pin capacitance

—

―

Input leakage

current

ILI

—

μA

VDDQ18 =

1.7 to 1.9 V

Without pull-up

or pull-down

resistor

All input pins

Output leakage

current

ILO

—

μA

Hi-Z output

Pull-up current

IPU

—

μA

VDDQ18 =

1.7 to 1.9 V

Vin = VSS

Pull-down current

IPD

—

μA

—

Vin = 1.7 to

1.9 V

RZ/G2H

RZ/G2M V1.3

RZ/G2N

RZ/G2E

RZ/G2M V3.0

RZ/G2N Datasheet(PDF) 63 Page - Renesas Technology Corp

RZ/G2N Datasheet(HTML) 63 Page - Renesas Technology Corp

Html Pages

1 2 3 4 5 6 7 8 9 10 11 12 13 14 15 16 17 18 19 20 21 22 23 24 25 26 27 28 29 30 31 32 33 34 35 36 37 38 39 40 41 42 43 44 45 46 47 48 49 50 51 52 53 54 55 56 57 58 59 60 61 62 63 64 65 66 67 68 69 70 71 72 73 74 75 76 77 78 79 80 81 82 83 84 85 86 87 88 89 90 91 92 93 94 95 96 97 98 99 100 ...More

Datasheet Download

Link URL