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RZ/G2E Datasheet(PDF) 85 Page - Renesas Technology Corp

Part # RZ/G2E
Description  RZ/G Series, 2nd Generation
PDF  169 Pages
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Manufacturer  RENESAS [Renesas Technology Corp]
Direct Link  http://www.renesas.com
Logo RENESAS - Renesas Technology Corp

RZ/G2E Datasheet(HTML) 85 Page - Renesas Technology Corp

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RZ/G Series, 2nd Generation Datasheet
Section 3. Electrical Characteristics
R01DS0483EJ0101 Rev.1.01
Page 85 of 169
Jun 30, 2025
3.10 LBSC
3.10.1 Normal Read/Write, Burst ROM Read
Table 3.10.1 Normal Read/Write Access Timing [RZ/G2H/RZ/G2M V1.3, RZ/G2M V3.0, RZ/G2N, RZ/G2E]
Conditions: VDDQ33 = 3.3 ± 0.2 V [RZ/G2H, RZ/G2M V1.3, RZ/G2M V3.0, RZ/G2N] / ± 0.3 V [RZ/G2E],
GND = VSSQ = 0 V, Tc = −40 to +115 °C [RZ/G2H, RZ/G2M V1.3],
Ta = -40 to +85 C [RZ/G2M V3.0, RZ/G2N, RZ/G2E],
Tj = -40 to +115 °C [RZ/G2M V3.0, RZ/G2N, RZ/G2E],
CL = 40 pF
Item
Symbol
Min.
Typ.
Max.
Unit
Figures
Address output delay time
tDA
0.0
—
6.0
ns
Figure 3.10.1
CS# output delay time
tDCS
0.0
—
6.0
ns
BS# output delay time
tDBS
0.0
—
6.0
ns
RD# output delay time
tDRD
0.0
—
6.0
ns
RD/WR# output delay time
tDRW
0.0
—
6.0
ns
Read data setup time
tSD
11.0
—
—
ns
Read data hold time
tHD
0.0
—
—
ns
WE# output delay time
tDWE
0.0
—
6.0
ns
Write data output delay time
tDD
0.0
—
6.0
ns
External wait signal setup time
tSEW
11.0
—
—
ns
External wait signal hold time
tHEW
0.0
—
—
ns
Table 3.3.10.2Burst ROM Read Access Timing
Conditions: VDDQ33 = 3.3 ± 0.2 V [RZ/G2H, RZ/G2M V1.3, RZ/G2M V3.0, RZ/G2N] / ± 0.3 V [RZ/G2E],
GND = VSSQ = 0 V, Tc = −40 to +115 °C [RZ/G2H, RZ/G2M V1.3],
Ta = -40 to +105 °C/ -40 to +85 C [RZ/G2M V3.0, RZ/G2N, RZ/G2E] ,
Tj = -40 to +115 °C [RZ/G2M V3.0, RZ/G2N, RZ/G2E], CL = 40 pF
Item
Symbol
Min.
Typ.
Max.
Unit
Figures
Address output delay time
tDABST
0.0
—
6.0
ns
Figure 3.10.2
CS# output delay time
tDCSBST
0.0
—
6.0
ns
RD# output delay time
tDRDBST
0.0
—
6.0
ns
Read data setup time
tSDBST
11.0
—
—
ns
Read data hold time
tHDBST
0.0
—
—
ns
RZ/G2H
RZ/G2M V1.3
RZ/G2N
RZ/G2E
RZ/G2M V3.0



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