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SIM689XM Datasheet(PDF) 11 Page - Sanken electric |
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SIM689XM Datasheet(HTML) 11 Page - Sanken electric |
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11 / 55 page  SIM689xM Series SIM689xM-DSE Rev.3.4 SANKEN ELECTRIC CO., LTD. 11 Mar. 05, 2024 https://www.sanken-ele.co.jp/en © SANKEN ELECTRIC CO., LTD. 2021 3.4.4 SIM6893M Parameter Symbol Conditions Min. Typ. Max. Unit Drain-to-Source Leakage Current IDSS VDS = 600 V, VIN = 0 V — — 100 µA Drain-to-Source On-resistance RDS(ON) ID = 2.5 A, VIN = 5 V — 0.45 0.60 Ω Source-to-Drain Diode Forward Voltage VSD ISD = 2.5 A, VIN = 0 V — 1.0 1.6 V High-side Switching Source-to-Drain Diode Reverse Recovery Time trr VDC = 300 V, ID = 2.5 A, VIN = 0→5 V or 5→0 V, TJ = 25 °C, inductive load — 85 — ns Turn-on Delay Time td(ON) — 470 — ns Rise Time tr — 40 — ns Turn-off Delay Time td(OFF) — 410 — ns Fall Time tf — 30 — ns Low-side Switching Source-to-Drain Diode Reverse Recovery Time trr VDC = 300 V, ID = 2.5 A, VIN = 0→5 V or 5→0 V, TJ = 25 °C, inductive load — 80 — ns Turn-on Delay Time td(ON) — 480 — ns Rise Time tr — 40 — ns Turn-off Delay Time td(OFF) — 670 — ns Fall Time tf — 30 — ns 3.4.5 SIM6895M Parameter Symbol Conditions Min. Typ. Max. Unit Collector-to-Emitter Leakage Current ICES VCE = 600 V, VIN = 0 V — — 1 mA Collector-to-Emitter Saturation Voltage VCE(SAT) IC = 5.0 A, VIN = 5 V — 1.75 2.20 V Diode Forward Voltage VF IF = 5.0 A, VIN = 0 V — 2.0 2.4 V High-side Switching Diode Reverse Recovery Time trr VDC = 300 V, IC = 5.0 A, VIN = 0→5 V or 5→0 V, TJ = 25 °C, inductive load — 100 — ns Turn-on Delay Time td(ON) — 760 — ns Rise Time tr — 180 — ns Turn-off Delay Time td(OFF) — 500 — ns Fall Time tf — 230 — ns Low-side Switching Diode Reverse Recovery Time trr VDC = 300 V, IC = 5.0 A, VIN = 0→5 V or 5→0 V, TJ = 25 °C, inductive load — 100 — ns Turn-on Delay Time td(ON) — 840 — ns Rise Time tr — 240 — ns Turn-off Delay Time td(OFF) — 510 — ns Fall Time tf — 230 — ns |
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