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LMH6560 Datasheet(PDF) 2 Page - National Semiconductor (TI) |
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LMH6560 Datasheet(HTML) 2 Page - National Semiconductor (TI) |
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2 / 23 page  Absolute Maximum Ratings (Note 1) If Military/Aerospace specified devices are required, please contact the National Semiconductor Sales Office/ Distributors for availability and specifications. ESD Tolerance Human Body Model 2000V (Note 2) Machine Model 200V (Note 3) Output Short Circuit Duration (Note 4),(Note 5) Supply Voltage (V + –V−) 13V Voltage at Input/Output Pins V + +0.8V, V− −0.8V Soldering Information Infrared or Convection (20 sec.) 235˚C Wave Soldering (10 sec.) 260˚C Storage Temperature Range −65˚C to +150˚C Junction Temperature (Note 6) +150˚C Operating Ratings (Note 1) Supply Voltage (V + –V−) 3-10V Operating Temperature Range (Note 6), (Note 7) −40˚C to +85˚C Package Thermal Resistance ( θ JA) (Note 6), (Note 7) 14-Pin SOIC 137˚C/W 14-Pin TSSOP 160˚C/W ±5V Electrical Characteristics Unless otherwise specified, all limits guaranteed for T J = 25˚C, V + = +5V, V− = −5V, V O =VCM = 0V and RL = 100 Ω to 0V. Boldface limits apply at the temperature extremes. Symbol Parameter Conditions Min (Note 9) Typ (Note 8) Max (Note 9) Units Frequency Domain Response SSBW Small Signal Bandwidth V O < 0.5VPP 680 MHz GFN Gain Flatness < 0.1dB V O < 0.5VPP 375 MHz FPBW Full Power Bandwidth (−3dB) V O =2VPP (+10dBm) 280 MHZ DG Differential Gain R L = 150 Ω to 0V; f = 3.58MHz 0.10 % DP Differential Phase R L = 150 Ω to 0V; f = 3.58MHz 0.03 deg Time Domain Response t r Rise Time 3.3V Step (20-80%) 0.6 ns t f Fall Time 0.7 ns t s Settling Time to 0.1% 3.3V Step 9 ns OS Overshoot 1V Step 4 % SR Slew Rate (Note 11) 3100 V/µs Distortion And Noise Performance HD2 2 nd Harmonic Distortion V O =2VPP; f = 20MHz −58 dBc HD3 3 rd Harmonic Distortion V O =2VPP; f = 20MHz −52 dBc THD Total Harmonic Distortion V O =2VPP; f = 20MHz −51 dBc e n Input-Referred Voltage Noise f = 1MHz 3 nV/ CP 1dB Compression Point f = 10MHz +23 dBm CT Amplifier Crosstalk Receiving Amplifier: R S =50 Ω to 0V; f = 10MHz −55 dB SNR Signal to Noise Ratio f = 5MHz; V O =1VPP 120 dB AGM Amplifier Gain Matching R L =2k Ω to 0V; f = 5MHz; V O =1VPP 0.05 dB Static, DC Performance A CL Small Signal Voltage Gain V O = 100mVPP R L = 100 Ω to 0V 0.97 0.995 V/V V O = 100mVPP R L =2k Ω to 0V 0.99 0.998 V OS Input Offset Voltage 2 20 25 mV TC V OS Temperature Coefficient Input Offset Voltage (Note 12) 28 µV/˚C www.national.com 2 |
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