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LMH6560 Datasheet(PDF) 5 Page - National Semiconductor (TI) |
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LMH6560 Datasheet(HTML) 5 Page - National Semiconductor (TI) |
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5 / 23 page ![]() 3V Electrical Characteristics Unless otherwise specified, all limits guaranteed for T J = 25˚C, V + = 3V, V− = 0V, V O =VCM =V +/2 and R L = 100 Ω to V+/2. Boldface limits apply at the temperature extremes. Symbol Parameter Conditions Min (Note 9) Typ (Note 8) Max (Note 9) Units Frequency Domain Response SSBW Small Signal Bandwidth V O < 0.5VPP 265 MHz GFN Gain Flatness < 0.1dB V O < 0.5VPP 40 MHz FPBW Full Power Bandwidth (−3dB) V O =1VPP (+4.5dBm) 115 MHZ Time Domain Response t r Rise Time 1V Step (20-80%) 1.1 ns t f Fall Time 1.3 ns t s Settling Time to 0.1% 1V Step 11 ns OS Overshoot 0.5V Step 0 % SR Slew Rate (Note 11) 480 V/µs Distortion And Noise Performance HD2 2 nd Harmonic Distortion V O = 0.5VPP; f = 20MHz −55 dBc HD3 3 rd Harmonic Distortion V O = 0.5VPP; f = 20MHz −61 dBc THD Total Harmonic Distortion V O = 0.5VPP; f = 20MHz −54 dBc e n Input-Referred Voltage Noise f = 1MHz 3 nV/ CP 1dB Compression Point f = 10MHz +4 dBm CT Amplifier Crosstalk Receiving Amplifier: R S =50 Ω to V+/2; f = 10MHz −55 dB SNR Signal to Noise Ratio f = 5MHz; V O =1VPP 120 dB AGM Amplifier Gain Matching R L =2k Ω to V+/2; f = 5MHz; V O =1VPP 0.4 dB Static, DC Performance A CL Small Signal Voltage Gain V O = 100mVPP R L = 100 Ω to V+/2 0.97 0.99 V/V V O = 100mVPP R L =2k Ω to V+/2 0.99 0.997 V OS Input Offset Voltage 1.6 8 10 mV TC V OS Temperature Coefficient Input Offset Voltage (Note 12) 2.6 µV/˚C I B Input Bias Current (Note 10) −3 −3.5 −1.4 µA TC I B Temperature Coefficient Input Bias Current (Note 12) 0.3 nA/˚C R OUT Output Resistance R L = 100 Ω to V+/2; f = 100kHz 2.1 Ω R L = 100 Ω to V+/2; f = 10MHz 2.8 PSRR Power Supply Rejection Ratio V S = +3V to VS = +3.5V; V IN =VS/2 48 46 65 dB I S Supply Current, All 4 Buffers No Load 11 15 18 mA Miscellaneous Performance R IN Input Resistance 17 k Ω C IN Input Capacitance 2 pF www.national.com 5 |
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