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PM6681ATR Datasheet(PDF) 32 Page - STMicroelectronics

Part # PM6681ATR
Description  Dual synchronous step-down controller with adjustable LDO
PDF  47 Pages
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Manufacturer  STMICROELECTRONICS [STMicroelectronics]
Direct Link  http://www.st.com
Logo STMICROELECTRONICS - STMicroelectronics

PM6681ATR Datasheet(HTML) 32 Page - STMicroelectronics

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Design guidelines
PM6681A
32/47
9.4
Input capacitors selection
In a buck topology converter the current that flows into the input capacitor is a pulsed current
with zero average value. The input RMS current of the two switching sections can be roughly
estimated as follows:
Equation 18
Where D1, D2 are the duty cycles and I1, I2 are the maximum load currents of the two
sections.
Input capacitor should be chosen with an RMS rated current higher than the maximum RMS
current given by both sections.
Tantalum capacitors are good in term of low ESR and small size, but they occasionally can
burn out if subjected to very high current during the charge. Ceramic capacitors have
usually a higher RMS current rating with smaller size and they remain the best choice.
Below there is a list of some ceramic capacitor manufacturers.
9.5
Power MOSFETs
Logic-level MOSFETs are recommended, since low side and high side gate drivers are
powered by LDO5. Their breakdown voltage VBRDSS must be higher than VINmax.
In notebook applications, power management efficiency is a high level requirement. The
power dissipation on the power switches becomes an important factor in switching
selections. Losses of high-side and low-side MOSFETs depend on their working conditions.
The power dissipation of the high-side MOSFET is given by:
Equation 19
Table 12.
Output capacitor manufacturer
Manufacturer
Series
Capacitor value
(uF)
Rated voltage (V)
ESR max (m
Ω)
SANYO
POSCAP TPB,TPD,
TPE
100 to 470
2.5 to 6.3
12 to 65
Panasonic
SPCAP UD, UE
100 to 470
2 to 6.3
7 to 18
Table 13.
Input capacitor manufacturer
Manufacturer
Series
Capacitor value (uF)
Rated voltage (V)
Tayio yuden
UMK432 X5506MM-T
10
50
TDK
C3225X5R1E106M
10
25
)
D
1
(
I
D
)
D
1
(
I
D
I
2
2
2
2
1
2
1
1
CinRMS
−
×
×
+
−
×
×
=
switching
conduction
DHighSide
P
P
P
+
=



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